TFT-LCD-工艺制程简介

2020年1月21日星期二10时35分42秒2009年04月21日周刚09-4-19编写Contents2.1.3.ArrayprocessModuleProcessCellProcessTFTLCD客户导向，团结协作精益生产，精益管理TeamworkTFT-LCDCOGRecipeOICSTKODFADITFT-LCDENGLISH一：ArrayProcessOrganizationArrayLayoutTFTARRAYPROCESSCC'ITOpixelelectrodeCross-sectionC-C’SelectlineDatalineStoragecapacitorCC'ITOpixelelectrodeCross-sectionC-C’SelectlineDatalineStoragecapacitora-SiTFTTFTStructure•Depositandpatterngatemetal•Functions:–GateofTFT–Selectlines–Bottomelectrodeofstoragecapacitor•Metaloptions:–Ti/Al/Ti–Al/Mo–Cr–MoCC'Cross-sectionCC’a-SiTFTarrayprocess–step1a-SiTFTarrayprocess–step2•DepositionofSiN/a-Si/n+byPECVD,patterningofa-Si•SiNisgatedielectricandstoragecapacitordielectric–Selectiveetchofa-Si–SiNisnotetchedCC'SiNa-Si/n+a-SiTFTarrayprocess–step3•Depositionandpatterningofsource/drainmetal•Functions:–Sourceanddrainmetal–Datalinemetal•Metaloptions–Ti/Al/TiorTi/Al–Cr–MoorMo/Al•Backetchofn+a-SifromchannelareaCC'a-SiTFTarrayprocess–step4•DepositionandpatterningofpassivationSiNbyPECVD•Function:–PassivateTFTCC'a-SiTFTarrayprocess–step5•DepositionandpatterningofITO•Function:–Pixelelectrode–TopelectrodeofstoragecapacitorCC'ITOpixelelectrodeCross-sectionC-C’SelectlineDatalineStoragecapacitorCC'ITOpixelelectrodeCross-sectionC-C’SelectlineDatalineStoragecapacitora-SiTFTTFTARRAYPROCESS___PVD/CVDSubstrateholderTargetholderAr+plasmaGlassTargetRFpower13.56MHz~1mTorrSubstrateholderTargetholderAr+plasmaGlassTargetRFpower13.56MHz~1mTorrUsedforITO(IndiumTinOxidetransparentconductor)andformetals(Al,Mo,Cr,etc.)DCSputterdepositionSchematicdiagramofDCpoweredsputterdepositionequipment(glowdischarge)ground-V(DC)VacuumCathodeshield~-100-1000VPVD原理ACLST/CP/CP/CP/CPECVD(即等离子体增强化学气相沉积)•工作原理:采用等离子辅助对化合物进行催化分解•目的:利用等离子体辅助活化反应气体,降低反应温度,改善薄膜质量PECVD原理LayerFeedgasMaterialTempFunction3LayerSiH4,N2,NH3A-SiNx320~350℃GateinsulatorSiH4,H2a-SiSemiconductorSiH4,PH3,H2n+a-SiContactlayeratsourceanddrain1LayerSiH4,N2,NH3A-SiNx270~290℃passivation•温度•气体流量比(Si:H,N:H,Si:N)•RF•Pressure•Spacing(上下电极间距)影响成膜工艺的主要参数周刚09-4-19编写M/AEUVMAINTEXT/COL4U/CU/CU/CU/CC/SSCRHP3HP3HP1HP3HP1COL1COL1M/ADPDEVELOPEREXTPSPSEXTM/AHP2HP2I/FBUFCOL3TITLER/EEEXTEXTHP2COL2EXTPSPSPSPSOUTINOUTINOUT30600mm6000mmHeight:2450mm5585mmTFTARRAYPROCESS___PHOTOSLITCOATEREXPOSURECANONMPA6000JUMPstageNozzleSlitCoater&DPDP照明光学系统掩膜板台基板台投影光学系统掩膜板交换装置操作用电脑缓冲装置MPA6000ExposureunitArrayCFTP&OLMarkOLTPTFTARRAYPROCESS___WETTFTARRAYPROCESS___DRYCassettestationL/LT/CDET原理利用Plasma将反应气体解离，ion轰击与radicals反应将Film移除，真空下进行RIE：指的是Reactiveionetching，即反应离子刻蚀ＥＰＤｆｏｒＤｒｙＥｔｃｈｉｎｇ１．目的ＤｒｙＥｔｃｈｉｎｇ蚀刻终点检测。ＥｎｄＰｏｉｎｔＤｅｔｅｃｔｏｒ２．原理利用从蚀刻中开始到结束为止特定的波长的光强度的变化，检测出蚀刻的最合适的终点。plasma13.56MHz検出器ＥＰＤOpticalfiberArrayTester将TFTArrayPanel进行测试，如果有短路（SHORT),或是短路(OPEN),就将坐标点记录下来，传给LaserRepair（激光修复机）修复之1.测量元件导通电流,ION2.测量元件截止电流,IOFF3.测量切入(CUTIN)电压VT4.测量电压电流曲线TVCURVE电压V电流I切入電壓IOFFIONTEGTAKEABREAKQUESTIONANDANSWERCF/ColorFilterLCSealantSpacerinSealSealwhitAUBallSpacerPITFTGlassPolarizer周刚09-4-19编写二：CellProcessPI前清洗CFTFTPI涂布预烤固烤配向PILineRubbingLineRubbing后清洗UV照射框胶点胶SealOven液晶滴下CFTFTODFLine衬垫料贴合一次切割（自动）二次切割（手动）CleanerPOLAttachCELLCFTFTTrimmerCELL工艺流程ScraperTypeDoctorRollDispenserAPR版APR:AsahiPhotosensitiveResinPICoaterProcessPICoater要求特性RubbingRubbing动作摩擦轮平台玻璃ProcessSpacerSprayShortDispenserSealDispenserLCDispenserUVCURECF上基板TFT下基板AssemblyProcessODF制成12ProcessScriberZeroleveldetect工作台运动方向及速度切割过程1.2.3.4.5.6.ProcessProcessE-C-PLengthGrindingWidthGrindingInOutEdgeGrind(Skip)ProcessCleanerProcessPOLAttach侧面动作示意正面动作示意POLAttachProcess周刚09-4-19编写三：ModuleProcessMICLBONDINGAOIFOGLINEFOGET点胶封胶UVACFASSEMBLYLINELEDINSLED装配ETLED装配包装LDET12345678910111213141516上铁框装配上铁框装配易撕贴贴附171819ET20LED装配MODULE工艺流程图ACFFOGUVLINKCOGIC邦定□镜检□AOI检测FOGACF粘贴FOG邦定□镜检电测1封胶□胶带粘贴补强UV固化组装□副屏电测□背光源检测□背光源组装□主副屏焊接□背光源焊接□主副屏组装□外框组装□外框焊接□触摸屏组装□触摸屏焊接□保护胶带粘贴最终电测老化老化包装包装出货出货JUMPModuleProcessFlowDriverConnectiontoGlassChiponFilm(COF)orChiponGlass(COG)ACFCOGCOGProcessFPCFPCProcessUVAgingConditions:50deg.C2hrsAging周刚即日