TCAD Sentaurus introduction 2014

©Synopsys20131SentaurusTCADIntroductionFranckNalletParis-15/09/2014©Synopsys20132CONFIDENTIALINFORMATIONThefollowingmaterialisbeingdisclosedtoyoupursuanttoanon-disclosureagreementbetweenyouoryouremployerandSynopsys.Informationdisclosedinthispresentationmaybeusedonlyaspermittedundersuchanagreement.LEGALNOTICEInformationcontainedinthispresentationreflectsSynopsysplansasofthedateofthispresentation.Suchplansaresubjecttocompletionandaresubjecttochange.Productsmaybeofferedandpurchasedonlypursuanttoanauthorizedquoteandpurchaseorder.Synopsysisnotobligatedtodevelopthesoftwarewiththefeaturesandfunctionalitydiscussedinthematerials.©Synopsys20133TCADApplicationSegmentsCMOS•AdvancedCMOS(Si,SOI,etc.)•Atomisticmodeling•Statisticalmodeling•ReliabilityOpto•ImageSensors•SolarCells•PhotodetectorsMemory•Flash•DRAM•ReRAMAnalog/RF•High-speeddevices•CompoundsemiconductorsPower•Discretedevices•PowerICs•Siliconandwidebandgap•ESD©Synopsys20134TCADProductPortfolioProcessSimulationSentaurusProcessFrameworkSentaurusPCMStudioSentaurusWorkbenchSentaurusTopographyStructureEditingSentaurusStructureEditorDeviceandInterconnectSimulationSentaurusDeviceRaphaelSentaurusInterconnectSentaurusLithographySentaurusProcessSentaurusLithographySentaurusTopographySentaurusStructureEditorSentaurusDeviceSentaurusInterconnectSentaurusWorkbenchSentaurusPCMStudioRaphael©Synopsys20135TCADDevelopmentFocuses•NewTechnologySupport–MoreMoore–FinFET,FDSOI,III-V,etc.–MorethanMoore–Analog/RF,CIS,solar,power(Si,SiC,GaN),TSV,etc.•3DSupport(FinFET,NVM,Power,SRAM,CIS)–Improvedmeshingandgeometricoperations–Stressmodeling–BEOLreliabilitymodeling–Topographysimulation•PerformanceandUsability–Improvedmulti-CPUscaling–Processsimulationspeed-up–Moreintuitiveuserinterface©Synopsys20136TCADSupportedPlatformsx86_641RedHatEnterpriseLinux5.7,5.9,6.2,6.4x86_641SUSELinuxEnterpriseServer10SP3,10SP42,11SP12,11SP22IBMRS600064-bitAIX36.1-TL6-SP51.The64-bit(x86_64)LinuxsoftwareisbinarycompatiblewiththeIntelorAMDx86_64processorsrunningRedHatEnterpriseLinux.2.Binary-compatiblehardwareplatformoroperatingsystem.Note,however,thatbinarycompatibilityisnotguaranteed.3.SentaurusDeviceElectromagneticWaveSolver,SentaurusInterconnect,SentaurusTopography,andSentaurusTopography3DarenotavailableonAIX.PlatformssupportedinI-2013.12release:©Synopsys20137SentaurusWorkbench–TCADSimulationPlatform•SentaurusWorkbenchGUIProjectsToolsSimulationTreeSimulationBranchNodes©Synopsys20138SentaurusWorkbench–EasyMaterial&ManualAccessManualsHTML-trainingPublicApplicationExampleLibrary©Synopsys20139SentaurusWorkbench–NodeExplorer•NodeExplorer(F7)providesquickaccesstoallnodedatamousedouble-clickonnode©Synopsys201310SentaurusWorkbench–FlexibleExecutionControlsselectednodesrunwithonemouseclick©Synopsys201311SentaurusProcessSimulator•Generalpurposemultidimensional(2D/3D)processsimulator•Integrated3Dgeometricmodelingengine(depo/etch/pattern)•Adaptivemeshing(togeometry/specieschanges)•APIforuser-definedmodels•Advancedphysicalmodels:–AnalyticandMonteCarloimplantation–Diffusion:laser/flashannealing,kineticMonteCarlo–Mechanicalstress–Oxidation/SilicidationKineticMonteCarloMechanicalStressAdaptiveMeshingOxidationFinFETSRAM©Synopsys201312ImplantationimplantArsenicdose=1e14energy=50tilt=7rotation=0info=2MCImplantation•SentaurusMC•(Crystal-TRIM)AnalyticImplantation•PrimaryDistributionsoGaussianoPearson(4parameters)oDualPearson(9parameters)•Screening•DamageModel•Amorphization•MolecularImplant•CalibratedImplantationTables©Synopsys201313DopantDiffusionDiffusionModelHierarchy•Constant(constantdiffusioncoefficient)•Fermi(pointdefectsequationnotsolved,defectsinequilibrium)•ChargedFermi(sameasFermi+totaldopantfluxisduetodopant-defectpairs)•Pair(dopant-defectspairsareinlocalequilibriumwithdopantanddefectconcentrations)•ChargedPair(sameasPair+reactionratesarestatechargedependent)•React(incl.defects,ratesarenotchargestatedependent)•ChargedReact(sameasReact+mobilechargeddopant-defects)Flash/LaserAnnealDopantActivationandClusteringSolidPhaseEpitaxialRegrowthEpitaxyClusteringofDefectsPressure-dependentDefectDiffusionSegregation&DoseLossKineticMCDiffusion©Synopsys201314Oxidation/SilicidationOxidationModelHierarhy•Deal/GroveModel•MassoudModel•MixedFlows(Hirabayashiapproach)Stress-DependentOxidation(SDO)Orientation-DependentOxidationDoping-DependentOxidationTrap-DependentOxidationInSituSteam-GeneratedOxidation(ISSG)SilicidationOxynitridation(N20)MovingBoundariesandAdaptiveMesh3DOxidation©Synopsys201315MechanicalStressModelingStressModel•Viscoplasticity•Plasticity•ViscoelasticityStressCausingMechanisms•StressInducedbyGrowthofMaterial•StressInducedbyDensification•StressInducedbyThermalMismatch•LatticeMismatchStress•IntrinsicStress©Synopsys201316Etching/DepositionEtchModels•Isotropic•Anisotropic&Directional•Polygonal•CMP•Fourier•Crystallographic•TrapezoidalDepoModels•Isotropic•Fill&Polygon•Fourier•SelectiveDepositionAlgorithms•Analytic•Level-set3DGeometryGeneration•MGOALS3D(level-set)•IntegratedSDE•S-Topo3D•MeshingwithSentau