Nikon光刻机对准系统概述及模型分析

EquipmentforElectronicProductsManufacturingEPE171Apr．2009Nikon111112(1.，，610054；2.，201203)：，。Nikon（Stepper），Nikon：LSA、FIA、LIA，。Nikon，，。：；；；：TN305.7：A：1004-4507(2009)01-0008-05NikonStepperAlignmentSystemandAnalysisofAlignmentModelingHEFeng1,WUZhiming1,WANGJun1,YUANKai1,JIANGYadong1,LIZhengxian2(1.StateKeyLaboratoryofElectronicThinFilmsandIntegratedDevices,UniversityofElectronicScienceandTechnolo-gyofChina,Chengdu,China,610054;2.ShanghaiNanpreMechanicsCo,Ltd,Shanghai,China)Abstract:Alignmentsystemisthemostsophisticatedpartofstepper,andunderstandingtheprinciplesofalignmentisoneofthekeystousinganddesigninglithographymachine.Inthepaper,firstlywein-troducethealignmentsystemofNikonstepper.thencomparethreestylesofalignmentinNikonstep-per:LSA、FIA、LIA,atlast,combinedwithmathematicalmodelsofNikonstepperalignmenttoana-lyzealignmentsignalintensityforimprovingtheaccuracyofalignment,theresultsprovideacertainguidingfunctionforthepracticalapplication.Keywords:Alignmentsystem;Stepper;Alignmentstyle;Alignmentmodel：2009-03-14、(IC)[1]。。IC1984-2007。：··8EquipmentforElectronicProductsManufacturingEPE171Apr．2009。。[2]。(NikonCanonASML)。NikonNSR。Nikon。。1NikonNikon。。。。Nikon、。。NikonNSRIC3LSA(Laserstepalignment)、LIA(filedim-agealignment)、FIA(laserinterferometeralignment)3LSAFIALIA。3。1.1LSALSA[3]。He-Ne632.8nm。。1(a)。He-Nex、y1(b)LSA。0±1。±(a)LSA8μm4μm20μm(b)LSA1LSA··9EquipmentforElectronicProductsManufacturingEPE171Apr．2009。LSALSA。LSALSA。1.2FIAFIANikonNSRG7/I7[4]。。LSAFIA550~800nm。2。CCD(ImageProcessingUnit)。FIA。。FIA、。FIA。FIA、。1.3LIALIA[1][1]。LIA。3LIAHe-Nef1f2()1S1。FIA。2S2。S2S1。LIALIALIALIALIA。LIA2FIA(a)FIA(b)FIA102μm(9)12μm70μm6μm··10EquipmentforElectronicProductsManufacturingEPE171Apr．2009He-Ne2112S1AOM1AOM2f1f2f1f2f1f23LIA。50dB10nm。。1(b)、2(b)LSA、FIA。±1(LSA)(LIA)。3。LSAFIALIA。。LSA。。3。2Nikon。LSANikonLSALSA。LSA±1。±1Fourier[5-6]I=4π2I0Rsin2πmm+1mmsin2δ2mm(1)I0Rmδδ=4πd/λdλHe-Ne。IC、、、、、。I。(1)3m、δ、R。mNikonNikonLSA4μm4μmm1。。m30%93%。δdd··11EquipmentforElectronicProductsManufacturingEPE171Apr．2009。δ=4πd/λ=πd=λ/4=158.2nmI。。4asnl。δ=2πl/λ(2)l=2{[a+n(d+s)]-[n(a+s)]}=2(a+nd-na)。KK=a/dδ=4πd(K+n-nK)/λAZ3100n=1.64K=0.5。d120nm。。158.2nm120nm。IC(CMP)0K=0。。。Imδ30%I20%。R[7]。NN=n-iknkt1t2...tx。Φx=2πNxtx/λ(3)rrx=(Nx+1-Nx)/(Nx+1+Nx)(4)MxMx=eiφxrxeiφxrxe-iφxe-iφφφx(5)MM=M1×M2×M3...Mx=abcφφd(6)r=c/a。RrR=r·r^。+(1μm)+(500nm)+(500nm)+(500nm)LSA。5。。。。IC1:1。sad4SignalwaveLSA-Xwavedatavolume=8192100500-80.00-40.000.0040.0080.005LSA(18)··/%12EquipmentforElectronicProductsManufacturingEPE171Apr．20093Nikon3(LSA、FIA、LIA)。。NikonASML。：[1].[D]...2008:4-6.[2].[J]..1997,4(26):17-22.[3]S.Murakami.LaserStepAlignmentforaWaferStepperinOpticalMicrolithographyIV.Proc[J].SPIE.1985,538:9-16.[4]TadashiNagayama,ShinichiNakajima,AyakoSugaya.NewMethodtoReduceAlignmentErrorCausedbyOp-ticalSystem[J].Metrology,Inspection,andProcessCon-trolforMicrolithographyXVII.SPIE.2003,5038:849-860.[5]G.Bouwhuis,S.Wittekoek.AutomaticAlignmentSys-temforOpticalProjectionPrinting[M].IEEETransac-tionsonElectronDevices.1979,26(4):723-728.[6].[J]..1999,27(7):82-85.[7]P.DerekCoon,ArunA.Aiyer.HighSpeedAlignmentSimulatorforNikonSteppers[C].ConferenceonOpticalMicrolithographyXII.SPIE.1999,3:208-211.HDP、SiC、GaN、InP、。3Corial-200MSiO2、、。：[1]CRCHandbookofChemistryandPhysics[M],CRCPress,BocaRaton,FL,1979,1-121.[2]S.M.Irving,K.E.Lemons,andG.E.Bobos,GasPlasmaVaporEtchingProcess,[P]U.S.APatent3,615,956.(FiledMarch27,1969;patentedOctober26,1971).[3]T.C.Penn,ForecastofVLSIProcessing-AHistoricalRe-viewoftheFirstDryProcessedIC[J],IEEETrans.Elec-tronDevices,ED-26,1979,640.[4]D.L.Tolliver,PlasmaProcessinginMicroelectronics-Past,Present,andFuture[J]SolidStateTechnol.,25,1980,99.[5]MichaelQuirk&JulianSerda,《》[J]2004200-206&277-307.[6],、《》[M]2002105-118.[7]C.J.Mogab,TheLoadingEffectinPlasmaEtching[J],J.Electrochem.Soc,124,1977,1262.(b)10HDPSiO2SEM：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：：(12)··18