交流电化学沉积铜纳米线阵列及其机理探讨

ACElectrochemicalDepositionofCuNanowireArraysandItsMechanism1,1,1,1,1,2(1,430073;2,200237)WANGXue2hua1,CHENGui1,LICheng2yong1,YANGLiang1,CAOHong1,ZHOUWei2min2(1SchoolofMaterialsScienceandEngineering,WuhanInstituteofTechnology,Wuhan430073,China;2ShanghaiNanotechnologyPromotionCenter,Shanghai200237,China):(AAO),,AAOCu(SEM)(TEM)X(XRD)Cu:,CuAAO,,Cu(111);AAO,,:;;:O646.6;TB383:A:100124381(2010)0820020204Abstract:Cunanowirearrayswerepreparedbyalternatingcurrent(AC)electrochemicaldepositionmethodinanodicaluminumoxide(AAO)templateswithhighlyorderedporesprocessedbysecondaryanodicoxidation.ThemorphologyandstructureofCunanowireswerecharacterizedbySEM,TEMandXRD,respectively.TheresultsindicatedthatCunanowirespreferredorientationalong(111)haduniformdistributioninCu/AAOnano2compositethinfilms.TheCunanowireshadastructureofpar2allelbrightstripesalternatingwithparalleldarkstripes.Themechanicsofac2electro2depositionwasdiscussed.Keywords:alternatingcurrentelectrochemicaldeposition;anodicaluminumoxidetemplate;coppernanowiresarray,,[1,2],(AnodicAluminumOxide,AAO)[3][4][5]DNA[6],,,AAO,[7,8],(Pt,Au),AAO,,,,,AAOCu,Cu,11.1AAO(99.999%,),35mm40mm0.2mm3min,5004h,02/20108[9],1(a)AAOAl,,1(b),1V/min50V10V,AAO1(a);(b)Fig.1Schematicdiagramofexperimentalequipment(a)experimentalfacility;(b)voltagestep2downprocess1.2Cu,Pt,,:120g/LCuSO4,H2SO4pH2.0,10V(50Hz)90min,301.3PhilipsSIRION200HitachiS24800AAOCu;XD25AX(Cu,30kV,20mA,2()/min);JEM2200CXCu22.1,,,,,,,2(a),50V,0.4molL-1AAO,1011/cm2,2(b),,,50nm250V,0.4mol/LAAOSEM(a);(b)Fig.2SEMimagesofAAOtemplatepreparedat50Vin0.4mol/LH2C2O4(a)topsurface;(b)lateralsurfaceAAO1mol/LNaOH15min,SEMCu3(a)SEM,,,NaOH,,,,3(b)3(a),,,Cu,Cu/AAO/Al,,,3(b)Cu,12AAO3(c)Cu/AAO,Cu,Cu,,Cu3(d)CuTEM,CuTEM,3(b),[10],,3SEMTEM(a)1mol/LNaOH;(b)3(a);(c)Cu/AAO;(d)CuTEMFig.3SEMandTEMimagesofCunanowiresandarrays(a)afteretchingin1mol/LNaOH;(b)partialenlargedviewoffig.3(a);(c)crosssectionofunetchingCu/AAO;(d)TEMimageofCunanowires4Cu/AAOXRD,JCPDS243125,5015574112Cu(111),Cu(200)Cu(220),AAOCu(111),Cu(200),Cu(220),AAOCu(111),218,AAO2.2Cu(AAO)AAO,AAOAl2O3,,[10],AAO,,,AAO4XRDFig.4XRDspectrumoftheCunanowirearrays55,,Cu2+,,,,(),Cu2+22/201085Fig.5SchematicdiagramofACelectrochemicaldepositionofCunanowirearrays,(),,Cu,,,,,,,,,,TEMSEM3(1),CuAAO,,(111),(2),,,[1]HUANGQiao2jian,LILLEYCM,BODEM,etal.SurfaceandsizeeffectsontheelectricalpropertiesofCunanowires[J].JApplPhys,2008,104:023709.[2]YULai2gui,YANGSheng2rong,WANGHong2tao,etal.Anin2vestigationofthefrictionandwearbehaviorsofmicrometercop2perparticleandnanometercopperparticle2filledpolyoxymethylenecomposites[J].JournalofAppliedPolymerScience,2000,77(11):2404-2410.[3]GHADDARA,GIERALTOWSKIJ,GLOAGUENF.Effectsofanodizationandelectrodepositionconditionsonthegrowthofcop2perandcobaltnanostructuresinaluminumoxidefilms[J].JournalofAppliedElectrochemistry,2009,39(5):719-725.[4]KOSHIKAWAH,MAEKAWAY,USUIH.Formationofcom2positefilmsofion2trackmembranesembeddedwithobliqueCunanowiresforanisotropicinfraredabsorption[J].RadiationPhys2icsandChemistry,2008,77(4):453-455.[5]SHARMAG,KRIPESHV,SIMMC,etal.Synthesisandcharacterizationofpatternedandnonpatternedcopperandnickelnanowirearraysonsiliconsubstrate[J].SensorsandActuatorsA,2007,139(1-2):272-280.[6]ZHAOKai,CHANGQi2fei,CHENXing,etal.SynthesisandapplicationofDNA2templatedsilvernanowiresforammoniagassensing[J].MaterialsScienceandEngineeringC,2009,29(4):1191-1195.[7]MONDALSP,DHARA,RAYSK.OpticalpropertiesofCdSnanowirespreparedbydcelectrochemicaldepositioninporousalu2minatemplate[J].MaterialsScienceinSemiconductorProcess2ing,2007,10(4-5):185-193.[8]SHIChun2sheng,WANGGuo2qiang,ZHAONai2qin,etal.NiOnanotubesassembledinporesofporousanodicaluminaandtheiropticalabsorptionproperties[J].ChemicalPhysicsLetters,2008,(454):75-79.[9],,,.AAO[J].,2008,(10):219-222,227.[10],,,.[J].,2001,17(2):116-118.:(20065004116235):2009208207;:2010204212:(1976),,,,:693(430073),E2mail:[e-mail]32