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HI-SINCERITYMICROELECTRONICSCORP.Spec.No.:HE6812IssuedDate:1992.08.25RevisedDate:2002.10.25PageNo.:1/3HMBT8050HSMCProductSpecificationHMBT8050NPNEPITAXIALTRANSISTORDescriptionTheHMBT8050isdesignedforgeneralpurposeamplifierapplications.Features•HighDCCurrenthFE=150-400atIC=150mA•ComplementarytoHMBT8550AbsoluteMaximumRatings•MaximumTemperaturesStorageTemperature...........................................................................................-55~+150°CJunctionTemperature....................................................................................+150°CMaximum•MaximumPowerDissipationTotalPowerDissipation(Ta=25°C)...............................................................................225mW•MaximumVoltagesandCurrents(Ta=25°C)VCBOCollectortoBaseVoltage.........................................................................................25VVCEOCollectortoEmitterVoltage......................................................................................20VVEBOEmittertoBaseVoltage..............................................................................................5VICCollectorCurrent.......................................................................................................700mACharacteristics(Ta=25°C)SymbolMin.Typ.Max.UnitTestConditionsBVCBO25--VIC=10uA,IE=0BVCEO20--VIC=1mA,IB=0BVEBO5--VIE=10uA,IC=0ICBO--1uAVCB=20V.IE=0*VCE(sat)--500mVIC=500mA,IB=50mAVBE(on)--1VVCE=1V,IC=150mA*hFE150-500VCE=1V,IC=150mAfT150--MHzVCE=10V,IC=20mA,f=100MHzCob--10pFVCB=10V,f=1MHz*PulseTest:PulseWidth≤380us,DutyCycle≤2%ClassificationOfhFERankD9DD9ERange150-300250-500SOT-23HI-SINCERITYMICROELECTRONICSCORP.Spec.No.:HE6812IssuedDate:1992.08.25RevisedDate:2002.10.25PageNo.:2/3HMBT8050HSMCProductSpecificationCharacteristicsCurveCurrentGain&CollectorCurrent1010010000.1110100100010000CollectorCurrent(mA)hFEVCE=1VSaturationVoltage&CollectorCurrent101001000100000.1110100100010000CollectorCurrent(mA)SaturationVoltage(mV)VBE(sat)@IC=10IBVCE(sat)@IC=100IBVCE(sat)@IC=10IBOnVoltage&CollectorCurrent10010001000010100100010000CollectorCurrent(mA)OnVoltage(mV)VBE(on)@VCE=1VCutoffFrequency&CollectorCurrent1010010001101001000CollectorCurrent(mA)CutoffFrequency(MHz)VCE=10VCapacitance&Reverse-BiasedVoltage1101000.11101001000Reverse-BiasedVoltage(V)Capacitance(pF)CobSafeOperatingArea110100100010000110100ForwardVoltage(V)CollectorCurrent(mA)PT=1msPT=100msPT=1sHI-SINCERITYMICROELECTRONICSCORP.Spec.No.:HE6812IssuedDate:1992.08.25RevisedDate:2002.10.25PageNo.:3/3HMBT8050HSMCProductSpecificationSOT-23Dimension*:TypicalInchesMillimetersInchesMillimetersDIMMin.Max.Min.Max.DIMMin.Max.Min.Max.A0.11020.12042.803.04J0.00340.00700.0850.177B0.04720.06301.201.60K0.01280.02660.320.67C0.03350.05120.891.30L0.03350.04530.851.15D0.01180.01970.300.50S0.08300.10832.102.75G0.06690.09101.702.30V0.00980.02560.250.65H0.00050.00400.0130.10Notes:1.DimensionandtolerancebasedonourSpec.datedSep.07,1997.2.Controllingdimension:millimeters.3.Maximumleadthicknessincludesleadfinishthickness,andminimumleadthicknessistheminimumthicknessofbasematerial.4.Ifthereisanyquestionwithpackingspecificationorpackingmethod,pleasecontactyourlocalHSMCsalesoffice.Material:•Lead:42Alloy;solderplating•MoldCompound:Epoxyresinfamily,flammabilitysolidburningclass:UL94V-0ImportantNotice:•Allrightsarereserved.ReproductioninwholeorinpartisprohibitedwithoutthepriorwrittenapprovalofHSMC.•HSMCreservestherighttomakechangestoitsproductswithoutnotice.•HSMCsemiconductorproductsarenotwarrantedtobesuitableforuseinLife-SupportApplications,orsystems.•HSMCassumesnoliabilityforanyconsequenceofcustomerproductdesign,infringementofpatents,orapplicationassistance.HeadOfficeAndFactory:•HeadOffice(Hi-SincerityMicroelectronicsCorp.):10F.,No.61,Sec.2,Chung-ShanN.Rd.TaipeiTaiwanR.O.C.Tel:886-2-25212056Fax:886-2-25632712,25368454•Factory1:No.38,KuangFuS.Rd.,Fu-KouHsin-ChuIndustrialParkHsin-ChuTaiwan.R.O.CTel:886-3-5983621~5Fax:886-3-5982931HJKDALGVCB321SStyle:Pin1.Base2.Emitter3.Collector3-LeadSOT-23PlasticSurfaceMountedPackageHSMCPackageCode:NMarking:RankCodeD9ControlCode
本文标题:HMBT8050中文资料
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