SOC芯片低功耗设计

湖南大学硕士学位论文SOC芯片低功耗设计姓名：陈静华申请学位级别：硕士专业：微电子学与固体电子学体指导教师：陈迪平20050301SOC芯片低功耗设计作者：陈静华学位授予单位：湖南大学参考文献(43条)1.KaushikRoy.SharatPrasadLowPowerCMOSVLSICircuitDesign20002.JanMRabaey.MassoudPedramLowPowerDesignMethodologies20013.ITRSInternationalTechnologyRoadmapforSemiconductor4.FarzadNekoogar.FaranakNekoogarFromASICstoSOCs20035.RAPowersBatteriesforlowpowerelectronics[外文期刊]1995(04)6.CAWarwickTrendsandlimitsinthetalktimeofpersonalcommunicators1995(04)7.Chandrakasan.SSheng.RBrodersenLow-PowerCMOSDigitalDesign[外文期刊]1992(04)8.Chandrakasan.RBrodersenMinimizingPowerConsumptioninDigitalCMOScircuits[外文期刊]1995(04)9.SivaNarendra.VivekDe.ShekharBorkarFull-ChipSubthresholdLeakagePowerPredictionandReductionTechniquesforSub0.18umCMOS2004(03)10.DongwooLee.DavidBlaauw.DennisSylvesterGateOxideLeakageCurrentAnalysisandReductionforVLSICircuits2004(02)11.KRoy.SMukhopadhyay.HMahmoodlLeakagecurrentmechanismsandleakagereductiontechniquesindeep-submicrometerCMOScircuits[外文期刊]2003(02)12.LekatsasH.HenkelJ.WolfWArithmeticCodingforLowPowerEmbeddedSystemDesign200013.RenZhiyuan.KroghBH.MarculescuRHierarchicalAdaptiveDynamicPowerManagement200414.PantP.VivekDe.ChatterjeeADevice-circuitoptimizationforminimalenergyandpowerconsumptioninCMOSrandomlogicnetworks199715.LiFei.HeLi.SalujaKKEstimationofMaximumPower-upCurrent200216.PVanoostendeEvaluationofthelimitationsofthesimpleCMOSpowerestimationformula:comparisonwithaccurateestimation199217.YongjunXu.ZLuoAverageleakagecurrentmacromodelingfordual-thresholdvoltagecircuits[会议论文]200318.STyagiA130nmgenerationlogictechnologyfeaturing70nmtransistors,dualVttransistorsand6layersofCuinterconnects200019.SMutoh.TDouseki1-Vpowersupplyhigh-speeddigitalcircuittechnologywithmulti-thresholdvoltageCMOS1995(08)20.TKurodaA0.9V150MHz10mW4mm2-Ddiscretecosinetransformcoreprocessorwithvariable-threshold-voltagescheme199621.KeshavarziEffectivenessofreversebodybiasforlowpowerCMOScircuits199922.徐勇军.骆祖莹.李晓维.李华伟双阈值CMOS电路静态功耗优化[期刊论文]-计算机辅助设计与图形学学报2003(3)23.RafikSGuindi.FaridNNajmDesignTechniquesforGate-LeakageReductioninCMOSCircuits200324.ITRSInternationalTechnologyRoadmapforSemiconductor25.KaushikRoyLeakageCurrentMechanismsandLeakageReductionTechniquesinDeep-SubmicronCMOSCircuits2003(02)26.YuanTaur.THNingFundamentalsofModernVLSIDevices199827.RDennardDesignofion-implantedMOSFET'swithverysmallphysicaldimensions1974(05)28.SMukhopadhyay.CNeauGateleakagereductionforscaleddevicesusingtransistorstacking2001(04)29.KSchuegraf.CHuHoleinjectionSiO2breakdownmodelforverylowvoltagelifetimeextrapolation1994(05)30.VivekDeLeakage-tolerantdesigntechniquesforhighperformanceprocessors200231.SMukhopadhyay.ARaychowdhury.KRoyAccurateEstimationofTotalLeakageCurrentinScaledCMOSLogicCircuitsBasedonCompactCurrentModeling200332.JJacobs.DAntoniadisChannelprofileengineeringforMOSFET'swith100nmchannellengths[外文期刊]1995(05)33.WYeh.JChouOptimumhalostructureforsub-0.1umCMOSFET's2001(10)34.DDonaghy.SHallDesignof50-nmVerticalMOSFETIncorporatingaDielectricPocket[外文期刊]2004(01)35.HMomiyama.SYamaguchi.SOhkuboIndiumtiltedchannelimplantationtechnologyfor60nmnMOSFET199936.THoriA0.1-umCMOStechnologywithtilt-implantedpunchthroughstopper199437.MJohnson.DSomasekhar.KRoyLeakagecontrolwithefficientuseoftransistorstacksinsinglethresholdCMOS199938.JHalter.FNajmAgate-levelleakagepowerreductionmethodforultralowpowercmoscircuits199739.EnricoMaciiDynamicPowerManagementofElectronicSystems2001(02)40.FLi.LHeMaximumCurrentEstimationwithConsiderationofPowerGating200141.FLi.LHeEstimationofMaximumPower-upCurrent200242.WLiao.JBasile.LHeLeakagePowerModelingandReductionwithDataRetention200243.CorrealeOverviewofthePowerMinimizationTechniquesEmployedintheIBMPowerPC4xxEmbeddedControllers1995本文链接：