XB8089G

XB8089G___________________________________________________________________________________________________________________XySemiInc-1-·ProtectionofChargerReverseConnection·ProtectionofBatteryCellReverseConnection·IntegrateAdvancedPowerMOSFETwithEquivalentof17mΩRDS(ON)·SOP8-PPPackage·OnlyOneExternalCapacitorRequired·Over-temperatureProtection·OverchargeCurrentProtection·Two-stepOvercurrentDetection:-OverdischargeCurrent-LoadShortCircuiting·ChargerDetectionFunction·0VBatteryChargingFunction-DelayTimesaregeneratedinside·High-accuracyVoltageDetection·LowCurrentConsumption-OperationMode:6μAtyp.-Power-downMode:3μAtyp.·RoHSCompliantandLead(Pb)FreeAPPLICATIONSOne-CellLithium-ionBatteryPackLithium-PolymerBatteryPackFigure1.TypicalApplicationCircuitXB8089G_______________________________________________________________________________________________________________________XySemiInc-2-[VCU](V)OverchargeReleaseVoltage[VCL](V)OverdischargeDetectionVoltage[VDL](V)OverdischargeReleaseVoltage[VDR](V)OvercurrentDetectionCurrent[IOV1](A)TopMarkXB8089GSOP8-PP4.4254.252.43.0108089GYW(note)Note:“YW”ismanufacturedatecode,“Y”meanstheyear,“W”meanstheweekPINCONFIGURATIONFigure2.PINConfigurationPINDESCRIPTIONXB8089GPINNUMBERPINNAMEPINDESCRIPTION1,2,3,4VMThenegativeterminalofthebatterypack.TheinternalFETswitchconnectsthisterminaltoGND5,7,8GNDGround,connectthenegativeterminalofthebatterytothispin6VDDPowerSupply9EPADExposedpad，pleaseconnectwithGNDofXB8089GABSOLUTEMAXIMUMRATINGS(Note:Donotexceedtheselimitstopreventdamagetothedevice.Exposuretoabsolutemaximumratingconditionsforlongperiodsmayaffectdevicereliability.)PARAMETERVALUEUNITVDDinputpinvoltage-0.3to6VVMinputpinvoltage-6to10VOperatingAmbientTemperature-40to85°CXB8089G_______________________________________________________________________________________________________________________XySemiInc-3-°CStorageTemperature-55to150°CLeadTemperature(Soldering,10sec)300°CPowerDissipationatT=25°C0.625WPackageThermalResistance(JunctiontoAmbient)θJA250°C/WPackageThermalResistance(JunctiontoCase)θJC130°C/WESD2000VELECTRICALCHARACTERISTICSTypicalsandlimitsappearinginnormaltypeapplyforTA=25oC,unlessotherwisespecifiedParameterSymbolTestConditionMinTypMaxUnitDetectionVoltageOverchargeDetectionVoltageVCU4.404.4254.45VOverchargeReleaseVoltageVCL4.24.254.3VOverdischargeDetectionVoltageVDL2.32.42.5VOverdischargeReleaseVoltageVDR2.93.03.1VChargerDetectionVoltageVCHA-0.05-0.12-0.2VDetectionCurrentOverdischargeCurrent1DetectionIIOV1VDD=3.5V10ALoadShort-CircuitingDetectionISHORTVDD=3.5V304050AMaximcontinuedischargecurrentImaxGoodradiationcondition6.5ACurrentConsumptionCurrentConsumptioninNormalOperationIOPEVDD=3.5VVM=0V612μACurrentConsumptioninpowerDownIPDNVDD=2.0VVMpinfloating36μAVMInternalResistanceInternalResistancebetweenVMandVDDRVMDVDD=3.5VVM=1.0V160kΩInternalResistancebetweenVMandGNDRVMSVDD=2.0VVM=1.0V25kΩFETonResistance30EquivalentFETonResistanceRDS(ON)VDD=3.6VIVM=1.0A17mΩXB8089G_______________________________________________________________________________________________________________________XySemiInc-4-=3.5V10mSLoadShort-CircuitingDetectionDelayTimetSHORTVDD=3.5V75uSFigure3.FunctionalBlockDiagramFUNCTIONALDESCRIPTIONTheXB8089Gmonitorsthevoltageandcurrentofabatteryandprotectsitfrombeingdamagedduetooverchargevoltage,overdischargevoltage,overdischargecurrent,andshortcircuitconditionsbydisconnectingthebatteryfromtheloadorcharger.Thesefunctionsarerequiredinordertooperatethebatterycellwithinspecifiedlimits.Thedevicerequiresonlyoneexternalcapacitor.TheMOSFETisintegratedanditsRDS(ON)isaslowas17mΩtypical.NormaloperatingmodeIfnoexceptionconditionisdetected,charginganddischargingcanbecarriedoutfreely.Thisconditioniscalledthenormaloperatingmode.XB8089G______________________________________________________