化学气相沉积技术与材料制备

X(,650221):,,::TG1741494:A:0258-7076(2001)05-0364-05(ChemicalVaporDeposition,CVD)[1],,,,()80,(NASA)CVD2,,1CVD111CVDCVD,(1):(1);(2);(3)1CVDFig.1Schematicdiagramofchemicalvapordeposition::(1),:SiH4(g)8001000Si(s)+2H2(2),Al2O3:255Vol.25.5CHINESEJOURNALOFRAREMETALS20019September2001X(2000E0085M);:2001201202;,,1963,,;:852Al(OC3H7)3420Al2O3+6C3H6+3H2O(3),:Pt(CO)2Cl2600Pt+2CO+Cl2Ni(CO)4140240Ni+4CO:(1)SiO2:SiH4+2O2325475SiO2+2H2O(2)Si3N4:3SiCl4+4NH3850900Si3N4+12HCl:(1)Zr:Zr(s)+2I2(g)250550ZrI4(g)13001400Zr(s)+2I2(g)(2)ZnSe:ZnSe(s)+I2(g)ZnI2(g)+1/2Se2(g)112CVDCVD,CVD:,,,,(2),:(1);(2);(3):(1),;(2),;(3),:,(1),,,,,,2Fig.2Schematicdiagramofchemicalvapordepositionwithclose2endtube2CVD211CVD,,;CVD,,,,CVD,()(NiFe2O4Y3Fe5O12CoFe2O4)212,2,,CVDCVD,,Al2O3SiCTiC213CVD,Nb3Sn5635CVD,,CVD,TiCTiNAl2O3,SiCSi3N4,CVD2060,[2,3],,CuO2P2O5CuO2V2O52P2O5V2O52P2O5214,CVDCVDCVD[4]3CVD311CVD(),CVD,CVD[511],,Goto[4],,(3)3CVDFig.3Aschematicdiagramofhorizontalhot2walltypeCVDapparatusGotoY2O3ZrO2(YSZ),,Ir2C,IrYSZIr2C,773K,Ir2CPtIr100312CVD,2060,,(66325),60(AFML)[12,13],,,CVD80(NASA)(MOCVD)[1419],4[14],,320m,50m,70%,CVD4Fig.4SchematicdiagramofCVDapparatusforiridiumcoat2ings313CVD,,[20],,,:[2]Pd()[21]Pd(32C3H5)(5-C5H5)Pd(3-C3H5)(CF3COCHCOCF3)[22]111:,1984112,AngusJC.1:,199513413111997,7:141,1993,22(4):825VargasJR,GotoT,ZhangWetal.AppliedPhysicsLet2ters,1994,65(9):10946GotoT,VargasJR,HiraiT.MaterialsScienceandEngi2neering,1996,A217/218:2237GotoT,VargasJR,HiraiT.JournalDePhysique,1993,3:2978GerfinT,HalgWJ,AtamnyFetal.ThinSolidFilms,1993,241:3529KwakBS,FirstPN,ErbilA.J.Appl.Phys.,1992,72(8):373510XueZ,StrouseMJ,ShuhDKetal.J.Am.Chem.Soc.,1989,111:877911KoplitzLV,ShuhDK,ChenYJetal.Appl.Phys.Lett.,1988,53(18):170512RamkeWG.HighTemperatureProtectiveCoatingsforGraphite.TechnicalReportML2TDR2642173.1964:19513MacklinBA,LamarPA.DevelopmentofImprovedMethodsofDepositingIridiumCoatingsonGraphite.AD843766.1968:6714HardingJT,KazaroffJM,AppelMA.ProceedingsoftheSecondInternationalConferenceonSurfaceModificationTechnologies,Chicago,1988:1015WootenJR,LawsawPT.High2temperature,Oxidation2ResistantThrusterResearch.NASACR2185233,1990:28216JassowskiDM.AdvancedSmallRocketChambersBasicProgramandOption2fundamentalProcessesandMate2rialEvaluation.NASACR2195349,1993:35217JassowskiDM,SchoenmanL.AdvancedSmallRocketChambersBasicProgramandOption321101bfIr2ReRocketVolume.NASACR2195435,1995:67818SchneiderSJ.High2temperatureThrusterTechnologyforSpacecraftPropulsion.IAF291254,1991:1619,,1,1998,28(3):720,,11:,1991:43521TungYL,TsengWG,LeeCYetal.Organometallics,1999,18(5):86422HiersoJC,SattoC,FeurerRetal.Chem.Mater.,76351996,8(10):2481ChemicalVaporDepositionandPreparationofMaterialsHuChangyiandLiJinghua(KunmingInstituteofPreciousMetals,Kunming650221,China)Abstract:Thegeneralruleandtechnologyofchemicalvapordeposition(CVD)wereintroducedfirst.Thedevelop2mentandapplicationofCVDtechnologyinpreparationofmaterialswerereviewed,especiallyinthepreparationoffilmsandcoatingsofpreciousmetals.KeyWords:Chemicalvapordeposition,Materialpreparation,Preciousmetals2002:CN1122017/TFCODEN:FENSE4:BM848:ISSN100020720:822431:00381982,:,,:,:,199919981,2000199922000CA,,16,11210100,60100,822431,:2,100088:010282013328,E2mail:[e-mail]86325