IR2110应用

IR2110(710048)MOSFETIR2110,IR2110IR2110MOSFET,,,,;IR2110;;;TN710/79TM924.1/.7,,,;,90%;,1/3,200KHz1.5W,,MOSFET(IR)IR2110,,,1MOSFETMOSFET,,,:(1)1015V,,,(2):2000-01-03:24(3)(1),,:(1)(1(a))MOSFET;;,(2)(1(b)),,,(3)(1(c))(4)(1(d)),(2),,,,,(5)(1(e)),TLP520,EXB841MOSFET,,,IR2110MOSFET,,IR2110MOSFET,,IR2110IR2110MOSFET,,,,IR2110MOSFET121()Vol.12No.120003JournalofChangdeTeachersUniversity(NaturalScienceEdition)Mar.2000©1995-2006TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.1MOSFET2IR2110IR21102,:2IR21102.1IR21100.1VDD,120ns95nsIR2110SD(11)SD,SDIR211085()12©1995-2006TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.,SD500ns,,IR2110,IR2110(13Vss)(2COM)5V,2.2NMOSFET,,MOSFET2A,,,,2A,MOSFET2,Vcc(8.6/8.2V),,2.3(2COM)+500V-5VNMOS6(VB),5(Vs),,MOSFET,,MOSFET,,15V,VB(6)Vs(5)(8.7/8.3V),3IR211033.1Vcc,:(1),(10V)u1,:C2.52QG/(Vcc-u1-10)QGM1,2(2),951IR2110©1995-2006TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.MOSFET,C2.5(IQBS),:C2.52IQBSton/(Vcc-u1-10)(3),,(4)(8.3V),,3.5V3.2;,,4IR21104.1IR2110MOSFET,,(100300KHz),4MOSFET,2IR2110,MOSFET,34.2(1),500V,0.1F(2)MOSFET,IR211025ns,,,MOSFET100,IR2110,44(3)MOSFET,IR2110,MOSFET15V,5IR2110MOSFET,55,IR2110,,,,,,,,(64)06()12©1995-2006TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.,:(1)CAD,(2),CAD(3),,,,CAD,,,(4),,CAD,,,;,,,CAD;,1..,1985(3):26282..,1987(2):30313...:,19954,..,1997(2):4042CADincityplanningLiSu(CollegeofEnvironmentalResourcesDevelopmentCentralSouthUniversityofTechnology,Changsha,410083)AbstractBasedonareviewofthedevelopmentofcomputerapplicationinChinesecityplanning,thepaperclearsuptheemergenceandpositionofCADincityplanning,andthenmakesadetailedanalysisofsometechnologicalissuesinit,includingbasicgraphicsinput,designdrawingsinput,andgraphicsoutput,towhichsolutionsareproposed.Finally,itdiscussesthemainfactorsindevelopingCADincityplanningwithspecialemphasisonrecognitionandtalent.KeywordsCAD;CADincityplanning;graphicsinput;graphicsoutput(:)(60)1.IGBTIR2130.,1999(1):4751.2..:,19953.EXB840.,1996(2):5153IR2110sfunctionsandapplicationinheatingpowersupplybyHFinductionChenWeiLiMinyuan(XianUniversityofTechnology,Xian,710048)AbstractAcomparisonismadebetweenthebasicdrivecircuitofthepowerMOSFETandthedrivecircuitcomposedofIR2110.TheprinciplesandfunctionsofIR2110areanalysed,anditsapplicationinheatingpowersupplybyHFinductionisstudied.UsedasthedriveofthepowerMOSFET,IR2110simplifiesthehardwareandimprovesitsreliability.KeywordsIR2110;HFinduction;MOSFET;drivecircuit(:)46()12©1995-2006TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.