ULN2003A资料

ULN2003A-ULN2004AULN2001A-ULN2002AFebruary2002SEVENDARLINGTONARRAYS®.SEVENDARLINGTONSPERPACKAGE.OUTPUTCURRENT500mAPERDRIVER(600mAPEAK).OUTPUTVOLTAGE50V.INTEGRATEDSUPPRESSIONDIODESFORINDUCTIVELOADS.OUTPUTSCANBEPARALLELEDFORHIGHERCURRENT.TTL/CMOS/PMOS/DTLCOMPATIBLEINPUTS.INPUTSPINNEDOPPOSITEOUTPUTSTOSIMPLIFYLAYOUTDESCRIPTIONTheULN2001A,ULN2002A,ULN2003andULN2004Aarehighvoltage,highcurrentdarlingtonarrayseachcontainingsevenopencollectordar-lingtonpairswithcommonemitters.Eachchannelratedat500mAandcanwithstandpeakcurrentsof600mA.Suppressiondiodesareincludedforinduc-tiveloaddrivingandtheinputsarepinnedoppositetheoutputstosimplifyboardlayout.Thefourversionsinterfacetoallcommonlogicfami-lies:ULN2001AGeneralPurpose,DTL,TTL,PMOS,CMOSULN2002A14-25VPMOSULN2003A5VTTL,CMOSULN2004A6–15VCMOS,PMOSTheseversatiledevicesareusefulfordrivingawiderangeofloadsincludingsolenoids,relaysDCmo-tors,LEDdisplaysfilamentlamps,thermalprint-headsandhighpowerbuffers.TheULN2001A/2002A/2003Aand2004Aaresup-pliedin16pinplasticDIPpackageswithacopperleadframetoreducethermalresistance.Theyareavailablealsoinsmalloutlinepackage(SO-16)asULN2001D/2002D/2003D/2004D.DIP16ORDERINGNUMBERS:ULN2001A/2A/3A/4ASO16ORDERINGNUMBERS:ULN2001D/2D/3D/4DPINCONNECTION1/8SCHEMATICDIAGRAMSeriesULN-2001A(eachdriver)SeriesULN-2002A(eachdriver)SeriesULN-2003A(eachdriver)SeriesULN-2004A(eachdriver)THERMALDATASymbolParameterDIP16SO16UnitRthj-ambThermalResistanceJunction-ambientMax.70120°C/WABSOLUTEMAXIMUMRATINGSSymbolParameterValueUnitVoOutputVoltage50VVinInputVoltage(forULN2002A/D-2003A/D-2004A/D)30VIcContinuousCollectorCurrent500mAIbContinuousBaseCurrent25mATambOperatingAmbientTemperatureRange–20to85°CTstgStorageTemperatureRange–55to150°CTjJunctionTemperature150°CULN2001A-ULN2002A-ULN2003A-ULN2004A2/8ELECTRICALCHARACTERISTICS(Tamb=25oCunlessotherwisespecified)SymbolParameterTestConditionsMin.Typ.Max.UnitFig.ICEXOutputLeakageCurrentVCE=50VTamb=70°C,VCE=50VTamb=70°CforULN2002AVCE=50V,Vi=6VforULN2004AVCE=50V,Vi=1V50100500500μAμAμAμA1a1a1b1bVCE(sat)Collector-emitterSaturationVoltageIC=100mA,IB=250μAIC=200mA,IB=350μAIC=350mA,IB=500μA0.91.11.31.11.31.6VVV222Ii(on)InputCurrentforULN2002A,Vi=17VforULN2003A,Vi=3.85VforULN2004A,Vi=5VVi=12V0.820.930.3511.251.350.51.45mAmAmAmA3333Ii(off)InputCurrentTamb=70°C,IC=500μA5065μA4Vi(on)InputVoltageVCE=2VforULN2002AIC=300mAforULN2003AIC=200mAIC=250mAIC=300mAforULN2004AIC=125mAIC=200mAIC=275mAIC=350mA132.42.735678V5hFEDCForwardCurrentGainforULN2001AVCE=2V,IC=350mA10002CiInputCapacitance1525pFtPLHTurn-onDelayTime0.5Vito0.5Vo0.251μstPHLTurn-offDelayTime0.5Vito0.5Vo0.251μsIRClampDiodeLeakageCurrentVR=50VTamb=70°C,VR=50V50100μAμA66VFClampDiodeForwardVoltageIF=350mA1.72V7ULN2001A-ULN2002A-ULN2003A-ULN2004A3/8TESTCIRCUITSFigure1a.Figure1b.Figure2.Figure3.Figure4.Figure5.Figure6.Figure7.ULN2001A-ULN2002A-ULN2003A-ULN2004A4/80100200300400500Ib(μA)0100200300400500Ic(mA)Tj=25˚CD96IN453TYPICALMaxFigure8:CollectorCurrentversusInputCurrent0.00.51.01.5Vce(sat)0100200300400500Ic(mA)Tj=25˚CD96IN454MaxTYPICALFigure9:CollectorCurrentversusSaturationVoltage020406080DC0100200300400500Icpeak(mA)Tamb=70˚C(DIP16)765432NUMBEROFACTIVEOUTPUTD96IN451Figure10:PeakCollectorCurrentversusDutyCycle020406080100DC0100200300400500Icpeak(mA)D96IN452A7532NUMBEROFACTIVEOUTPUTTamb=70˚C(SO16)Figure11:PeakCollectorCurrentversusDutyCycleULN2001A-ULN2002A-ULN2003A-ULN2004A5/8DIP16DIM.mminchMIN.TYP.MAX.MIN.TYP.MAX.a10.510.020B0.771.650.0300.065b0.50.020b10.250.010D200.787E8.50.335e2.540.100e317.780.700F7.10.280I5.10.201L3.30.130Z1.270.050OUTLINEANDMECHANICALDATAULN2001A-ULN2002A-ULN2003A-ULN2004A6/8SO16NarrowDIM.mminchMIN.TYP.MAX.MIN.TYP.MAX.A1.750.069a10.10.250.0040.009a21.60.063b0.350.460.0140.018b10.190.250.0070.010C0.50.020c145˚(typ.)D(1)9.8100.3860.394E5.86.20.2280.244e1.270.050e38.890.350F(1)3.840.1500.157G4.65.30.1810.209L0.41.270.0160.050M0.620.024S(1)DandFdonotincludemoldflashorprotrusions.Moldflashorpotrusionsshallnotexceed0.15mm(.006inch).OUTLINEANDMECHANICALDATA8˚(max.)ULN2001A-ULN2002A-ULN2003A-ULN2004A7/8Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconse-quencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.STMi-croelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSTMicroelectronics.TheSTlogoisaregisteredtrademarkofSTMicroelectronics©2002STMicroelectronics–PrintedinItaly–AllRightsReservedSTMicroelectronicsGROUPOFCOMPANIESAustralia-Brazil-Canada-China-Finland-France-Germany-HongKong-India-Israel-Italy-Japan-Malaysia-Malta-Morocco-Singapore-Spain-Sweden-Switzerland-UnitedKingdom-UnitedStates.