基于PC929的IGBT驱动和保护电路设计

PEPC929IGBTIGBTPC929IGBTIGBTIGBTPC929-basedDriveandProtectionCircuitforIGBTZiZhenningHaoRuixiangYouXiaojieZhengQionglin(SchoolofElectricalEngineering,BeijingJiaotongUniversity,Beijing100044,China)AbstractIGBTdrivecircuitdemandofthedesignareconcludedinthispaper,accordingtotheIGBTcomponentcharacteristics.AsimpleandpracticalPC929-baseddriveandprotectioncircuitforIGBTdesignedbyourselvesisintroduced,anditsprotectioncircuitperformancehasanalyzed.IthasbeentestifiedbyswitchexperimentandfaultprotectionexperimentthatitcansatisfytheIGBTdriverequest,andhasthereliableprotectionfunction.KeywordsIGBTdrivecircuitprotectioncircuit1IGBT(IsolatedGateBipolarTransistor)2080[1]IGBTIGBTIGBTEXB841M57962LIR2110[4]IXDN404[7]IGBT[3]PC929IGBT2IGBTIGBT1IGBTIGBTUGEICUGEUGE15V[2]IGBTUGE-10V2IGBTIGBT3IGBTIGBT4IGBT5IGBT20V[6]6IGBTIGBTPEIGBTG-E3PC929IGBTSHARPPC9290.4A0.5s4kVIGBTPC9293.11PC929PC929PWM1326V1314IGBTPC929VCCO1GNDCFS131211981431102O2AKIGBT5VR1R2+26V5VPWMxFAULTR3R4R5C1R8R9R10R13R11R6R7R12DWC3C2D2D1D3ECG10VB11PC92911R10R1110VDW10VPC929E16V10VIGBT9R6R7R8R9R13D1D2D3C299Vcc-6V83.21PWMPC929PWMx11E16VR10IGBTPWMx11E10VIGBTR10R10IGBTIGBTR10IGBTR10IGBTIGBTR10R10100Ω2PC929IGBTVceR6R9R13D3VceIGBTIGBT9Vcc-620V8FSB1RSPEVce2FP25R12KE3IGBT15VIGBT10A25A2125VCE2V25AR6R9R13VCE2VPC9299Vcc-6VPC929PWM2FP25R12KE3IGBT[5]IGBT9C293.3≥1SRQQ5VR1R2FAULTCLEARC1Q1PWM3PWM3'SC≥1PWM2≥1PWM1≥1PWM4≥1PWM5≥1PWM6PWM4'PWM5'PWM6'PWM2'PWM1'3IGBT3IGBTPC929FAULTRSQQSCDSPDSP43.7kWPWM4l216V10VIGBT5l23s16VIGBT456l2PE3s10VIGBT7IGBTl2IGBT23sIGBTIGBT675PC9293.7kW6IGBTIGBTIGBT[1]..,1995,6.[2],.IGBT.,2002(5)1921.[3],.IGBT.,2005(4)8993.[4],.IGBT.,2004(8):2930.[5]SHARP.PC929Series.SHARP,2004.[6],.EXB841IGBT.,2004(6):3740.[7],.IGBTIXDN404.,2005(4):4952.中国首台国产60万kW超超临界机组投产200783160kW168h32005460kW360kW3292g71301