光存储材料及其存储机理

419*∗100084*(60207001)(G1999033000)2004-05-151977Email:[e-mail]34TP333.4A1001-97312004-0419-021[1,2]22.1[3]20021132003~20042.21ReferencelaserSLMRecordingmediumCCDLensLensObjectlaser1Fig1Schemeticillustrationofholographicstorage[4,5]420200435(LiNbO3)(SBN)(BaTiO3)20025Gb/cm3[6]2.3PSHB[7~9]PSHB1985MacfarlaneBaFCl:Sm2+[7]1989BaFCl0.5Br0.5:Sm2+PSHB[8]MyM’1-yFClxBr1-x:Sm2+(M,M’=Mg,Ca,Sr,Ba;x,y[0,1])[9]1991BaySr’1-yFCl0.5Br0.5:Sm2+2.4(ETM)ETMETETMTE1eVTETME[10]XFXXSrS:Eu,Sm488nmEu2+2=1064nmEu2+3=615nm240nm560nm420nm3[1]..[M].:,2003,7:1-17.[2]..[J].,1998,16(2):1-8.[3]TadaakiT.Analysisofefficiencyofimageformationandpredictionoffutureofcolorfilmanddigitalstillcamera.[J].,2001,19(1):48-71.[4]BurrG,CoufalH,JeffersonCM,etal.Holographicstorage421delivershighdatadensity.[J].LaserFocusWorld,2000,36(12):123.[5],,..[J].,2001,27(3):283-288.[6],,,..[J].,1999,2.[7]WinnackerA.,ShelbyR.M.,MacfarlaneR.M..Photon-gatedhole-buring:anewmechanismusingtwostepphotoionization.[J].Opt.Lett,1985,10:350-352.[8]WeiChangjiang,HuangShihua,YuJiaqi.Two-phononholeburningandfluorescence-line-narrowingstudiesonBaFCl0.5Br0.5:Sm2+at77K.[J].J.Lumin,1989,43:161-166.[9]ZhangJiahua,HuangShihua,YuJiaqi.HightemperaturestabilityofaspectralholeburntinSm-dopedSrFClcrystals.[J].Opt.Lett,1992,17(16):1146-1148.[10]LindmayerJ.Anewerasableopticalmemory.[J].SolidStateTechnol.,1988,31(8):135-138.[11],,,..[J]..2001,22(3):161-165.OpticalstoragematerialsandtheirmechanismJIANJi-qi,ZhangQi-cheng,WANGYu-ying,JIAHui-bo,XUDuan-yi(NationalEngineeringResearchCenterforOpticalMemory,TsinghuaUniversity,Beijing100084,China)AbstractThispaperreviewsseveralkindsofopticalstoragematerials,includingsilverhalidephotographicmaterial,holographicmaterial,spectralholeburningmaterial,andelectrontrappingmaterial,aswellastheirrecordingmechanism.Italsointroducestheadvancesonsilver-halide-basedmulti-wavelengthopticalstorageinNationalResearchCenterforOpticalMemory.Keywordsopticalstorageopticalstoragematerialrecordingmechanismsilverhalidephotographicmaterial