MOSFET特性参数的理解

NECPMDMOSMOSFET11..DraintoSourceVoltageGatetoSourceVoltageDrainCurrent(DC)TotalPowerDissipationDrainCurrent(Pulse)StorageTemperatureChannelTemperatureSingleAvalancheCurrentSingleAvalancheEnergy-GSDGSDGSVDSS:(D)(S)VGSSMOSFETton=1.21.2ID(DC)TC=25ID(Pulse)D:Ton:T:T1.31.3PT:TC=2525(1)C:CaseTA=2525(2)A:Ambient=25(1)(2)1.41.4Tch:MOSFETTch150Tstg:MOSFETMOSFET-551501.51.5PTTch(1)(2)Tch(max)-TcPT(Tc=25-degC)Rth(ch-c)=Tch(max)-TAPT(TA=25-degC)Rth(ch-A)=th(ch-)(())Tch(max)-TcPT(Tc=25-degC)Rth(ch-c)===PT(W)RthRth==22SK37402SK3740PT(Ta=25)Tch(max)-TAPT(TA=25-degC)Rth(ch-A)=1.5PT(W)Tch=Tc+Rth(ch-c)xPtTch=T+Rth(ch-)xPt/Rth(ch-c)=Tch(max)TCPC=25Tch=Tch=TcRth(ch-c)P=5021.2552.52SK3740Tch(PT(Tc=25)=100W)Tc=50Pt=2WSOA=SafeOperatingAreaAOS=AreaofSafeOperatingAIDVDS1.51.5SOASOABCDEVSWVSWVDVSW123SW1.71.7IDVDIDVDSVDSPark)VDSS(1)()VDSSVDVDSVDSMOSFET(BVDSS)VDSSVGS=0V=SWOFF)(2)MOSFETVDVDSS600VMOSFET()StartingTchIDIASVDDVDSBVDSSDUTVDDLRG=2550RGVGS=200VSingleIAS:EAS:Tch150EAR:Tch15020%20%50%125Tch501002022..VDSSDGSVGSSDGS2.12.1IDSS:VGS=0DSVDSSIGSS:VDS=0GSVGSSDGS2.22.2VVGS(offGS(off))VVGS(thGS(th))MOSFETVDS=10VID=1mAVGS.VDS=10VID=1mAMOSFET:2.2mVmV2.32.3yfsyfsVGSIDShFE:3SVGS1V3AONyfs2.42.4RRDSDS(on(on))MOSFETMOSFET2SK3113(600V/2A)2.52.5QGDC/DCQGQGSQGDQG2SK3918(25V/48A)2.62.6QG:VGS=10VQGS:QGD:Q=CVt=QItVDDDUTRG=25RLRG2.72.7Td(on):tr:Td(off):tf:2.82.8·/VGS=0-·/MOSFETTrr2.92.9trrtrrQrrQrrQrrtrrMOSFETIFQrrTrr33