东进-FPD材料介绍

FPDMaterial1stDivisionMaterialsforFPDMaterialsforFPDContentsContentsI.MaterialsforTFT-LCDCuprocessII.MaterialsforPrintingprocessIII.MaterialsforOLEDIV.DyesensitizedSolarCellMaterialsforTFTMaterialsforTFT--LCDCuprocessLCDCuprocessDongjinProductsfortheTFTDongjinProductsfortheTFT--LCDStructureLCDStructure-.PositivePhotoresist-.Stripper/Thinner-.Etchant/Developer-.OrganicInsulatorDONGJININSIDEMaterialsforTFTMaterialsforTFT--LCDCuprocessLCDCuprocessClassificationClassificationPRSuppliesSuppliesDSP,DTFR-seriesItemItemLCDStripperDPS-seriesEtchantCuEtchant-seriesRinserDJR-series4(5)MaskCu-processBias↓,Taperangle↑NoteNoteCu,Normal-processSliceEtch-GDSExcellentProfileGoodUniformityOxideRemovalOrganicContaminationsMaterialsforcuprocessMeritofcuprocess1.Merit-LargeSize(D-ICRight/Downarea)-HighResolution-FFS:CDlargeElectrodeCap↑R↓-CuCDsmallTransmittance↑2.Demerit-△LLarge:Cu(WetEtch)Small:Mo(DryEtch)ContentsI.CuPhotoresistII.CuStripperIII.CuRinserCompositionCu4-MaskPRNormal4-MaskPRResinMetarich高Metarich高PhotoActiveCompoundTetraBase(TaperAngleupafterPhoto)AdditiveAdhesionPromoter(GoodEtchBias)-Meta-richResinHalfToneMarginPACAdditiveResinGoodH/TUniformityResidueFreeafterPhoto┼PRTaperup:ResolutionupGoodWetEtchBiasHardBakeSkip┼ConceptofCuPhotoresistComparisonofCu4MPRandN-4MPRCOOHHOHOHO┼TetraTaper-up用GoodAdhesion/AdhesionPromoter1stWetEtchDryEtching2ndWetEtchNormalPRCuPRPRCuSiNxConceptofCuPhotoresistMechanismofN-PR/Cu-PRprocessCuprocess-PRPhotoResistforCuProcessAdvantageHalftoneuniformityHightaperangleLowetchskewTaperAngle&CDEtchSkew(Bias)DongjinPRConventionalPR1.980.5638.739.2Proximity40um56.856.8SoftContact31.431.4Proximity40um49.949.6SoftContactContentsI.CuPhotoresistII.CuStripperIII.CuRinserConceptofCuStripperPerformanceCharacteristicofcompositionAmineLowMetalDamage:PureAl,CuImprovementofstripability•SelectofhighboilingpointamineReduceofchemicalratiochange•SelectofgoodstripabilityamineGlycolImprovementofrinsaibility•GoodRinsebilityGlycolPolarSolvent•LowMoleculeWeightSolventImprovementofPRSolubility•ImprovementofPRSolubilityAdditive•Improvementofstripability•PreventofcumetalcorrosionCharacteristicofcompositionCopperPhotoresistSubstrateCopperSubstrateCopperSliceetchingSubstrateCopperNormalstripSubstrateSliceetchingRemainedtheResidueonCopperlayer.RemovetheResidueonCopperlayerDongjinDongjin’’ssolutionConceptssolutionConceptDefectremovalconceptforCu[TestCondition]-Chemical:EC,DPS-3300-ChemicalTemp.:80℃(EC),70℃(DPS-3300)-Sample:Cumonolayer-Spraytypetest-Spraytime:30min(Chemical),2min(DIwater)EthyleneCarbonateDPS-3300After15HoursInitialChemicalExerciseofSliceEtchingExerciseofSliceEtching-.Bufferrinseskip-.Cuattackfree50~70Amine-baseDPS-3300-.Bufferrinseskip-.MetalAttackFree40~60WatersystemDWLS-series-.Bufferrinseskip-.MetalAttackFree50~70Amine-baseDPS-3400-.Bufferrinseskip50~70Amine-baseDPS-6000series-.NormalProcess50~70Amine-baseDPS-1000seriesProcessStripperRe-processStripperNegaPosiCr-.ColorFilterRe-process-.MetalAttackFree50~70-.ColorFilterRe-process-.ColorFilterRe-processNoteMo/Al/MoCulayerAllayerOrganicinsulator50~70TMAH-base50~70KOH-baseDCS-seriesTemp.(℃)LCDPRApplicationsRGB/BMOCMetalLayerTypeProductsDongjinDongjin’’sStripperProductsMapsStripperProductsMapDPS-6700(MildAmine,NormalPolarSolvent)DPS-3400(MildAmine,StrongPolarSolvent)IIIIIIPASkipProcessUsedStrongAmine(ex.MEA)MustUseMildAmineBecausetheMetalDamageProcessTemp.:50℃BecausetheFastEvaporateRateofPolarSolventOrGoodStripAbilityto50℃ProcessTemp.:70℃ForTheFastStripTime.DPS-1600(MEA/BDGbase)DPS-2000(MEA/DMSObase)IUsingtheIPA(Normalstripper)ProcessTemp.:70℃ForTheFastStripTime.ButMustUseIPAbecauseMetalDamageIPAlessstripperIPAlessstripper(PowerfulStripAbility)DPSseriesDPSseriesOrganicSystemstripperProducts19952003200920051999200720011~2013YearGateMetal교체issueDevelopmentDirection(1)LowTemp.process(2)Lowcost(3)Applicabletoeverysubstrate(4)CombinationofMaterialandEquipment(LifetimeandStripcapabilityincrease)NormalStripper65~70℃StripBufferRinseProcessSkip(Cu,Ag,etc)(Amine-BasedChemistry:MEA/BDG,MEA/DMSO)(IPA,DMSOrinseprocessskipChemistry)BufferRinseProcessSkipMetallayerattackFreeCutargetStripperCutargetStripperStripperDevelopmentRoadmapStripperforCuProcessAdvantageLowMetalDamage:PureAl,Mo,CuImprovementofstrip-ability,Rinsability,andPRsolubilityPreventofcumetalcorrosion1stStrip2ndStrip3rdStripDongjinStripper(70℃)OtherCompanyStripper(70℃)Cuprocess-StripperdamagedamageAllStrippedContentsI.CuPhotoresistII.CuStripperIII.CuRinser1)BasrinsepropertyonCulayer1)BasrinsepropertyonCulayerCuhashighercontactangleandCuismuchmorehydrophobicthananyothermetalincludingAl→ThesurfaceofCucanbeeasilycontaminatedbyorganicparticles.→WhenDIWdryup,smallorganicparticleonDIWgettogetherandaffectpost-process.2)CucorrosiononCulayer2)CucorrosiononCulayerCuismorecorrosivethanAlbecauseofthehighintensityofelectriccharge.ThestackedmetallayeronorbottomofCuiseasilycorrodedbecauseoftheGalvanicEffect.DefectsbyparticlesCuprocessissueCuprocessissueBadrinseproperty&MetalcorrosionGlassCuSource