7MBP75RA120中文资料

IGBT-IPMRseries1200V/75A7inone-package7MBP75RA120Features·TemperatureprotectionprovidedbydirectlydetectingthejunctiontemperatureoftheIGBTs·Lowpowerlossandsoftswitching·CompatiblewithexistingIPM-Nseriespackages·HighperformanceandhighreliabilityIGBTwithoverheatingprotection·Higherreliabilitybecauseofabigdecreaseinnumberofpartsinbuilt-incontrolcircuitMaximumratingsandcharacteristicsAbsolutemaximumratings(atTc=25°Cunlessotherwisespecified)SymbolRatingUnitMin.Max.DCbusvoltageDCbusvoltage(surge)DCbusvoltage(shortoperating)Collector-EmittervoltageDBReversevoltageINVCollectorcurrentDC1msDCCollectorpowerdissipationOnetransistorDBCollectorcurrentDC1msForwardcurrentofDiodeCollectorpowerdissipationOnetransistorJunctiontemperatureInputvoltageofpowersupplyforPre-DriverInputsignalvoltageInputsignalcurrentAlarmsignalvoltageAlarmsignalcurrentStoragetemperatureOperatingcasetemperatureIsolatingvoltage(Case-Terminal)ScrewtorqueMounting(M5)Terminal(M5)VDCVDC(surge)VSCVCESVRICICP-ICPCICICPIFPCTjVCC*1Vin*2IinVALM*3IALM*4TstgTopViso*5Item002000----------00-0--40-20---900100080012001200751507550025502519815020Vz1Vcc15125100AC2.53.5*63.5*6VVVVVAAAWAAAW°CVVmAVmA°C°CkVN·mN·m*1ApplyVccbetweenterminalNo.3and1,6and4,9and7,11and10.*2ApplyVinbetweenterminalNo.2and1,5and4,8and7,12,13,14,15and10.*3ApplyVALMbetweenterminalNo.16and10.*4ApplyIALMtoterminalNo.16.*550Hz/60Hzsinewave1minute.*6RecommendableValue:2.5to3.0N·mElectricalcharacteristicsofpowercircuit(atTc=Tj=25°C,Vcc=15V)ItemSymbolConditionMin.Typ.Max.UnitINVCollectorcurrentatoffsignalinputCollector-EmittersaturationvoltageForwardvoltageofFWDDBCollectorcurrentatoffsignalinputCollector-EmittersaturationvoltageForwardvoltageofDiodeICESVCE(sat)VFICESVCE(sat)VFVCE=1200VinputterminalopenIc=75A-Ic=75AVCE=1200VinputterminalopenIc=25A-Ic=25A––1.0mA––2.6V––3.0V––1.0mA––2.6V––3.3VFig.1Measurementofcasetemperature7MBP75RA120IGBT-IPMElectricalcharacteristicsofcontrolcircuit(atTc=Tj=25°C,Vcc=15V)ItemSymbolConditionMin.Typ.Max.UnitPowersupplycurrentofP-linesidePre-driver(oneunit)PowersupplycurrentofN-linesidethreePre-driverInputsignalthresholdvoltage(on/off)InputzenervoltageOverheatingprotectiontemperaturelevelHysteresisIGBTchipsoverheatingprotectiontemperaturelevelHysteresisCollectorcurrentprotectionlevelINVDBOvercurrentprotectiondelaytime(Fig.2)UndervoltageprotectionlevelHysteresisAlarmsignalholdtimeSCprotectiondelaytimeLimitingresistorforalarmfsw=0to15kHzTc=-20to100°C*7fsw=0to15kHzTc=-20to100°C*7ONOFFRin=20kohmVDC=0V,Ic=0A,Casetemperature,Fig.1surfaceofIGBTchipsTj=125°CTj=125°CTj=25°CFig.2Tj=25°CFig.3IccpICCNVin(th)VZTCOHTCHTjOHTjHIOCIOCtDOCVUVVHtALMtSCRALM3101.001.25-110-150-11338-11.00.21.5-1425--1.351.608.0-20-20--10--2-150018651.701.95-125------12.5--121575mAmAVVV°C°C°C°CAAμsVVmsμsohmDynamiccharacteristics(atTc=Tj=125°C,Vcc=15V)ItemSymbolConditionMin.Typ.Max.UnitSwitchingtime(IGBT)Switchingtime(FWD)tonIC=75A,VDC=600VtofftrrIF=75A,VDC=600V0.3----3.6--0.4μsμsμsThermalcharacteristics(Tc=25°C)ItemSymbolTyp.Max.UnitJunctiontoCasethermalresistanceCasetofinthermalresistancewithcompoundRth(j-c)Rth(j-c)Rth(j-c)Rth(c-f)-0.25-0.73-0.630.05-°C/W°C/W°C/W°C/WINVIGBTFWDDBIGBTItemSymbolMin.Typ.Max.UnitDCbusvoltageOperatingpowersupplyvoltagerangeofPre-driverSwitchingfrequencyofIPMScrewtorqueMounting(M5)Terminal(M5)VDC200-800VVCC13.51516.5VfSW1-20kHz-2.5-3.0N·m-2.5-3.0N·mRecommendablevalue*7SwitchingfrequencyofIPM7MBP75RA120IGBT-IPMBlockdiagramPre-driversincludefollowingfunctionsa)Amplifierfordriverb)Shortcircuitprotectionc)Undervoltagelockoutcircuitd)Overcurrentprotectione)IGBTchipoverheatingprotectionOutlinedrawings,mmMass:440g7MBP75RA120IGBT-IPMCharacteristics(Representative)ControlCircuit010203040500510152025Powersupplycurrentvs.SwitchingfrequencyTj=100°CN-sideP-sidePowersupplycurrent:Icc(mA)Switchingfrequency:fsw(kHz)Vcc=13VVcc=13VVcc=15VVcc=15VVcc=17VVcc=17V00.511.522.512131415161718Inputsignalthresholdvoltagevs.PowersupplyvoltageInputsignalthresholdvoltagePowersupplyvoltage:Vcc(V)Tj=25°CTj=125°C}Vin(on)}Vin(off):Vin(on),Vin(off)(V)0246810121420406080100120140Undervoltagevs.JunctiontemperatureUndervoltage:VUVT(V)Junctiontemperature:Tj(°C)00.20.40.60.8120406080100120140Undervoltagehysterisisvs.JnctiontemperatureUndervoltagehysterisis:VH(V)Junctiontemperature:Tj(°C)00.511.522.5312131415161718Alarmholdtimevs.PowersupplyvoltageAlarmholdtime:tALM(mSec)Powersupplyvoltage:Vcc(V)Tj=125°CTj=25°C05010015020012131415161718OverheatingcharacteristicsTcOH,TjOH,TcH,TjHvs.VccOverheatingprotection:TcOH,TjOH(°C)Powersupplyvoltage:Vcc(V)TjOHTcOHTcH,TjHOHhysterisis:TcH,TjH(°C)7MBP75RA120IGBT-IPMInverter02040608010012000.511.522.53Collectorcurrentvs.Collector-EmittervoltageTj=25°CCollectorCurrent:Ic(A)Collector-Emittervoltage:Vce(V)Vcc=13VVcc=15VVcc=17V02040608010012000.511.522.53Vcc=13VVcc=15VVcc=17VCollectorcurrentvs.Collector-EmittervoltageTj=125°CCollectorCurrent:Ic(A)Collector-Emittervoltage:Vce(V)10100100010000020406080100120Switchingtimevs.CollectorcurrentEdc=600V,Vcc=15V,Tj=25°CSwitchingtime:ton,toff,tf(nSec)Collector