ThinFilm-资料(新人版)

TFTrainingReportPage:1•PVDIntroduction•CVDIntroduction•CMPIntroductionTFTrainingReportPage:2•PVD(PhysicalVaporDeposition)TFTrainingReportPage:3傳統式(DCPlasma)DCmagnetron準直管式LTS(LongThrowSputter)離子化式Sputter種類:TFTrainingReportPage:4•傳統式(DCPlasma)TFTrainingReportPage:5•DCMagnetronTFTrainingReportPage:6•準直管式TFTrainingReportPage:7DCmagnetron/準直管式:5~10cmLTS:15~35cm•LTS(LongThrowSputter)TFTrainingReportPage:8•離子化式TFTrainingReportPage:9•SputterEtching:RFpower(high/lowfrequency)TFTrainingReportPage:10PSC8ATFSputterListEQIDProcessNameModelVender台灣代理商MachineQ'tyMHSputterTi/TiNCentura5200PVDAMAT台灣應材3Centura5200PVDAMAT台灣應材2Endura5500PVDAMAT台灣應材1Centura5200PVDAMAT台灣應材3Endura5500PVDAMAT台灣應材3MGSputterAlEndura5500PVDAMAT台灣應材820MKSputterTi/TiN(LTS)MISputterCO•8ASputterMachineListTFTrainingReportPage:11Machine:MGMachineName:AlCuSputter&TiNreactivesputterVendor/Model:AMAT_Endura5500H-4chMachineCode:MG201/202/203LLALLBDegasCH-FBufferTiN(常溫)CH-CCoolCH-ACoolCH-BRe-flow(440C)CH-4TransferTiN(常溫)CH-3AlCu(50C)CH-2Machine:MHMachineName:Sputter(TiN)Vendor/Model:AMAT_CenturaPVD-2chMachineCode:MH001/002/003TiCH-AETCHCH-CBufferLLATiNCH-BDegasCH-FLLB•SputterChamberConfigurationTFTrainingReportPage:12機台名稱:AMATEndura5500PVD機台編碼:MG,MK,MI製程名稱:SutterAl,Ti,TiN,CoFrontSideTFTrainingReportPage:13機台名稱:AMATCentura5200PVD機台編碼:MH,MK,MI製程名稱:SutterTi,TiN,CoFrontSideTFTrainingReportPage:14BufferChamber內部構造CenturaEnduraTFTrainingReportPage:15Chamber內部構造TinchamberALchamberTFTrainingReportPage:16Chamber內部構造SputterEtchchamberTFTrainingReportPage:17ACBox/RFRackCompressor機台附屬配備TFTrainingReportPage:18機台附屬配備A07VPumpA30WPumpTFTrainingReportPage:19Neslab機台附屬配備ChillerTFTrainingReportPage:20•CVD(ChemicalVaporDeposition)化學薄膜沉積機制TFTrainingReportPage:21•化學沉積比較物理沉積TFTrainingReportPage:22CVD種類:•介電材料CVD•導電材料CVDCVD反應室種類:•APCVD(常壓)•LPCVD(低壓)•PECVD(電漿)TFTrainingReportPage:23•介電材料CVDTFTrainingReportPage:24•8A介電材料CVDMachineListPSC8ATF生產機台ListEQIDProcessNameModelVender台灣代理商MachineQ'tyAPCVDBPSGMCVD-A23-8F-HMitsubishi新武8SACVDBPSGProducer-SAMAT台灣應材2DGPECVDTEOSbaseSiO2filmEagle-10ASMASM6DCPECVDSiH4baseSi3N4filmEagle-10ASMASM4PECVDSiH4baseSiONfilmEagle-10ASMASM3PECVDSiH4baseSiONfilmProducerAMAT台灣應材1PQSOGforSiO2sandwichprocessTR8171UD-TMTOK展研2DSHDPCVDSiH4baseSiO2filmCentura5200HDPAMAT台灣應材632DTDRTFTrainingReportPage:25•介電材料---ThermalCVDTFTrainingReportPage:26機台名稱:MitsibishiAPCVD機台編碼:DT製程名稱:BPTEOSFrontSideTFTrainingReportPage:27機台名稱:ProducerSA-CVD機台編碼:DT製程名稱:BPTEOSTFTrainingReportPage:28Frontdoor內部ProducerrobotTFTrainingReportPage:29TransferChamber內部構造Chamber內部構造TFTrainingReportPage:30•介電材料---PECVDTFTrainingReportPage:31機台名稱:ASMEagle10機台編碼:DR,DG,DC製程名稱:PlasmaARC,P-SiO2depo,P-SiNdepoFrontSideTFTrainingReportPage:32MachineSide機台名稱:ASMEagle10機台編碼:DR,DG,DC製程名稱:PlasmaARC,P-SiO2depo,P-SiNdepoPump&generatorTFTrainingReportPage:33SOGliquid•介電材料---Spin-onGlassCVDTFTrainingReportPage:34機台名稱:TOKTR8171UD機台編碼:PQ製程名稱:SOGcoatingFrontSideTFTrainingReportPage:35•介電材料---HighDensityPlasmaCVDTFTrainingReportPage:36機台名稱:AMATCenturaHDPCVD機台編碼:DS製程名稱:P-SiO2depoFrontSideTFTrainingReportPage:37Chamberwafer破片Bufferchamberwafer破片TFTrainingReportPage:38•導電材料CVDTFTrainingReportPage:39PSC8ATF生產機台ListEQIDProcessNameModelVender台灣代理商MachineQ'tyDHW-CVDCentura5200WxzAMAT台灣應材8MKCVDTi/TiNUNITY-EPTEL漢民1DWDCS（SiH2Cl2）baseWsixfilmMB2-730TEL漢民312•8AMetalCVDMachineListTFTrainingReportPage:40機台名稱:AMATCenturaWxzCVD機台編碼:DH製程名稱:W-CVDdepoFrontSideTFTrainingReportPage:41機台名稱:TELUNITY-EPPCE/TI/TIN機台編碼:MK701製程名稱:CVD-TI/TINDepoFrontSideTFTrainingReportPage:42Chamber內部構造W-CVDchamberW-CVDCooldownchamberTFTrainingReportPage:43機台附屬配備W-CVDGaspanelW-CVDACboxTFTrainingReportPage:44機台附屬配備W-CVDPumpW-CVDScrubberTFTrainingReportPage:45機台附屬配備W-CVDHeaterexchangerW-CVDVMBTFTrainingReportPage:46機台附屬配備MK701ACboxMK701VMBTFTrainingReportPage:47機台附屬配備MK701LDSMK701ScrubberTFTrainingReportPage:48EBARACMPF-REX200CMP化學機械研磨TFTrainingReportPage:49•8ACMPMachineListPSC8ATF生產機台ListEQIDProcessNameModelVender台灣代理商MachineQ'tyOxideCMPEPO222,FRX-200EBARA漢民9Mira-MesaAMAT台灣應材1FRX-200EBARA漢民111MXW-CMPTFTrainingReportPage:50機台名稱:EBARAEP0222,FREX-200機台編碼:MX製程名稱:CMPFrontSideTFTrainingReportPage:51Wafer處理流程：DryRobotPencilCleanerLRollerCleanerLCassetteCassetteCassetteCassetteRobot2RRobot2LTurn-OverRTurn-OverLPencilCleanerRRollerCleanerRPolishingUnitRPolishingUnitLCassetteDryRobot(DryIn)WaferstationTurn-OverRobot2PolishingUnitTurnoverRollercleanerPencilcleanerCassette翻轉wafer，正面朝下，以利後續研磨翻轉wafer，正面朝上，以利後續清洗第一階段清洗Robot2Robot2第二階段清洗、旋乾DryRobot(DryOut)進行CMP製程Wafer暫存區F-REX200MainConfigurationTFTrainingReportPage:52TFTrainingReportPage:53TFTrainingReportPage:54研磨單元基本架構：基本架構主要由Top-ring(研磨頭)、Turn-Table(研磨盤)、Dresser(研磨墊整理器)、Slurrydelivery(研磨漿供應器)四部分所組成。研磨時透過Top-ring將wafer壓置於Pad，再施加Downforce、Backsidepressure，搭配適當的Top-ring&Turn-table轉速、Slurryflowrate，來達到CMP製程需求。Turn-TableSlurryDeliveryPadDresserTop-RingWaferDownForce調節N2壓力來提供BacksidePressureTFTrainingReportPage:55在CMP研磨製程之後，wafer必須立即徹底清洗，來移除殘留的Slurry(研磨漿粒)，以及研磨過程中所產生的污染物清洗過程共分為兩階段，第一階段為RollerCleaner，使用D.I.W(超純水)或NH4OH(氨水)來進行清潔，Roller共有上下兩組，