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JIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,LTDSOT-89-3LPlastic-EncapsulateTransistorsPXT8050TRANSISTOR(NPN)FEATURESzComplimenttoPXT8550MARKING:Y1MAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)SymbolParameterValueUnitVCBOCollector-BaseVoltage40VVCEOCollector-EmitterVoltage25VVEBOEmitter-BaseVoltage5VICCollectorCurrent-Continuous1.5APCCollectorPowerdissipation0.5WTJJunctionTemperature150℃TstgStorageTemperature-55~150ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditionsMinTypMaxUnitCollector-basebreakdownvoltageV(BR)CBOIC=100uA,IE=040VCollector-emitterbreakdownvoltageV(BR)CEOIC=0.1mA,IB=025VEmitter-basebreakdownvoltageV(BR)EBOIE=100μA,IC=05VCollectorcut-offcurrentICBOVCB=40V,IE=00.1μAEmittercut-offcurrentICEOVCE=20V,IE=00.1μAEmittercut-offcurrentIEBOVEB=5V,IC=00.1μAhFE(1)VCE=1V,IC=100mA85400DCcurrentgainhFE(2)VCE=1V,IC=800mA40Collector-emittersaturationvoltageVCE(sat)IC=800mA,IB=80mA0.5VBase-emittersaturationvoltageVBE(sat)IC=800mA,IB=80mA1.2VBase-emittervoltageVBEVCE=1V,IC=10mA1VBase-emitterpositivefavorvoltageVBEFIB=1A1.55VTransitionfrequencyfTVCE=10V,IC=50mA,f=30MHz100MHzoutputcapacitanceCobVCB=10V,IE=0,f=1MHz15pFCLASSIFICATIONOFhFE(1)RankBCDD3Range85-160120-200160-300300-400SOT-89-3L1.BASE2.COLLECTOR3.EMITTER℃B,Nov,2012【南京南山半导体有限公司—长电贴片三极管选型资料】03006009001200110100100011010010004006008001000120002550751001251500.00.10.20.30.40.50.61101001000110100100011010010001010010000.1110110100012345670.000.050.100.150.200.250.30101001101001000COMMONEMITTERVCE=1VVBEIC——BESE-EMMITERVOLTAGEVBE(mV)COLLECTORCURRENTIC(mA)Ta=25℃Ta=100℃β=10ICVBEsat——BASE-EMITTERSATURATIONVOLTAGEVBEsat(mV)COLLECTORCURREMTIC(mA)Ta=100℃Ta=25℃PC——TaAMBIENTTEMPERATURETa()℃COLLECTORPOWERDISSIPATIONPC(W)Ta=100℃Ta=25℃β=10ICVCEsat——COLLECTOR-EMITTERSATURATIONVOLTAGEVCEsat(mV)COLLECTORCURREMTIC(mA)150015001500300PXT8050TypicalCharacteristicsIChFE——Ta=100℃Ta=25℃DCCURRENTGAINhFECOLLECTORCURRENTIC(mA)COMMONEMITTERVCE=1V1500f=1MHzIE=0/IC=0Ta=25℃VCB/VEBCob/Cib——CobCibREVERSEVOLTAGEV(V)CAPACITANCEC(pF)20COMMONEMITTERTa=25℃1mA0.9mA0.8mA0.7mA0.6mA0.5mA0.4mA0.3mA0.2mAIB=0.1mACOLLECTORCURRENTIC(A)COLLECTOR-EMITTERVOLTAGEVCE(V)StaticCharacteristic2COMMONEMITTERVCE=10VTa=25℃COLLECTORCURRENTIC(mA)TRANSITIONFREQUENCYfT(MHz)ICfT——B,Nov,2012【南京南山半导体有限公司—长电贴片三极管选型资料】Min.Max.Min.Max.A1.4001.6000.0550.063b0.3200.5200.0130.020b10.4000.5800.0160.023c0.3500.4400.0140.017D4.4004.6000.1730.181D1E2.3002.6000.0910.102E13.9404.2500.1550.167ee1L0.9001.2000.0350.0473.000TYP.0.118TYP.SymbolDimensionsInMillimetersDimensionsInInches1.550REF.0.061REF.1.500TYP.0.060TYP.【南京南山半导体有限公司—长电三极管选型资料】LabelontheInnerBoxLabelontheOuterBoxQALabelSealtheboxwiththetapeSealtheboxwiththetapeStamp“EMPTY”ontheemptyboxInnerBox:210mm×208mm×mmOuterBox:440mm×440mm×230mmThetopgasket1000×1PCSLabelontheReelThebottomgasketThefilefolderPlasticbag
本文标题:PXT8050贴片三极管-SOT-89三极管封装PXT8050参数
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