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1Chapter3半导体基础原理、组件与制程王凤江,Ph.D.fjwang@just.edu.cn2目标•从元素周期表上至少可以认出两种半导体材料•列出n型和p型的掺杂物•描述一个二极管和一個MOS晶体管列出在半导体工业所制造的三种芯片•列出至少四种在芯片制造上必备的基本制程原子结构3碳原子:原子核包含相同数目的质子(+)和中子,6个电子()绕原子核外围轨道运转。价电子电子(负电荷)中子(中性)原子数(质子数)核心(原子中心;包含质子和中子)轨道壳质子(正电荷)价电壳(原子外壳)C6++NN+NN++N+N------电子壳层4K=2L=8M=18N=32O=32P=10Q=25单原子的轨道示意图与能带价带,Ev能隙,Eg价壳层原子核导带,Ec钠和氯的电子轨迹模型6-----------Na11钠原子氯原子Cl17-----------------7能带、能隙和电阻系数Eg=1.1eVEg=8eV铝2.7mWcm钠4.7mWcm硅~1010mWcm二氧化硅1020mWcm导体半导体绝缘体离子8Na+当一个原子失去一个电子成为正离子Na11----------Cl当一个原子得到一个电子成为负离子Cl17------------------周期表常用元素的特性离子键共价键元素周期表Rf104Ha105Sg106Uns107Uno108Une109IAIIAIIIBIVBVBVIBVIIBIBIIBIIIAIVAVAVIAVIIAVIIIAVIIIBHydrogenH11.008BerylliumBe49.012Na11Sodium22.989Li3Lithium6.9391224.312MgMagnesium19KPotassium39.102Ca2040.08CalciumSc21Scandium44.956Ti22Titanium47.90V23Vanadium50.942ManganeseMn2554.938Fe26Iron55.847Co27Cobalt58.933Ni28Nickel58.71Rh45Rhodium102.91Zn30Zinc65.37As33Arsenic74.922Se34Selenium78.96Br35Bromine79.909Kr36Krypton83.80Al13Aluminum26.981Si14Silicon28.086P15Phosphorus30.974S16Sulfur32.064Cl17Chlorine35.453Ar18Argon39.948B5Boron10.811C6Carbon12.011N7Nitrogen14.007O8Oxygen15.999F9Florine18.998Ne10Neon20.183He2Helium4.0026Rb37Rubidium85.47Sr38Strontium87.62Y39Yttrium88.905Zr40Zirconium91.22Nb41Niobium92.906Molybde-numMo4295.94Cr24Chromium51.996TechnitiumTc4399Ru44Ruthenium101.07Cd48Cadmium112.40Cu29Copper63.54PalladiumPd46106.4SilverAg47107.87Sm62Samarium150.35Ga31Gallium69.72In49Indium114.82Ge3272.59GermaniumSn50Tin118.69Sb51Antimony121.75Te52Tellurium127.60I53Iodine126.904Xe54Xenon131.30Cs55Cesium132.90Ba56Barium1137.34La57Lanthanum138.91Hf72Hafnium178.49Ta73Tantalum180.95W74Tungsten183.85Re75Rhenium186.2Os76Osmium190.2Ir77Iridium192.2Pt78Platinum195.09Au79Gold196.967Hg80Mercury200.59Tl81Thallium204.37Pb82Lead207.19Bi83Bismuth208.98Po84Polonium210At85Astatine210Rn86Radon222Uun110Fr87Francium223Ra88Radium226Ac89227ActiniumCe58Cerium140.12Pr59Praseodym-ium140.9160NdNeodym-ium144.24Pm61Prome-thium147EuropiumEu63151.96Gd64Gadolin-ium157.25Tb65Terbium158.92Dy66Dyspro-sium162.50Ho67Holmium164.93Er68Erbium167.26Tm69Thulium168.93Yb70Ytterbium173.0471LuLutetium174.97Th90Thorium232.04Pa91Procat-inium231U92Uranium238.03Np93Neptunium237Pu94Plutonium242AmericiumAm95243Cm96Curium247BerkeliumBk97247Cf98Califor-nium249Es99Einstein-ium254Fm100Fermium253Md101Mendelev-ium256102NoNobelium253Lr103Lawren-cium257TransitionMetalsNonmetalsMetalloids(semimetals)LanthanidesActinidesC612.011152.035703470s.†0.77原子量阴电性酸碱特性‡原子数熔点(℃)*沸点(℃)原子半径(Å)*基於碳12.()表示大部分稳态或同位素。†s.表示升华。‡氧化物之区分,若为红色则为酸性,若为蓝色则为硷性,且颜色之深浅代表酸硷性之强弱。此外,若同时显示两色,则表示具备两种特性。周期表的元素方格族群特性IA1价电子;容易释出电子;低阴电性极不稳定活性极强;爆裂的离子键形式基于污染考虑,建议不要使用此族之金属IIA2价电子相当不稳定活性相当强尽量避免使用此族金属IIIA3价电子掺杂半导体材料之元素(主要为B)常见之内联机导体材料(如Al)IVA4价电子半导体材料共价键形式常用於晶圆制造之族群化学元素特性Continuedonnextslide族群特性VA5价电子掺杂半导体材料之元素(主要为P和As)VIA6价电子VIIA7价电子;容易吸引电子;高阴电性腐蚀性活性极强离子键形式适合于半导体应用,如化合物之蚀刻及清洗VIIIA8价电子稳定;活性极弱钝气安全地用在半导体制造方面IB最佳金属导体Cu取代Al作为主要的内连接导体材料IVB–VIB常用于半导体制程之耐高温金属,可改善金属化制程(尤其是Ti,W,Mo,Ta和Cr)和硅反应稳定的化合物,具良好电性常用於晶圆制造之族群化学元素特性(续)具离子键的NaCl结构Cl-Na+---------------Cl17---H1氢原子氯原子H+ClHCl2个原子共用一个电子,形成共价键HCl的共价键16主题•半导体是什么?•基本半导体组件•基本集成电路制程17半导体是什么?•介于导体和绝缘体之间•藉掺杂物控制导电性•硅和锗•半导体化合物–碳化硅,锗化硅–砷化镓,磷化銦,等.Rf104Ha105Sg106Uns107Uno108Une109IAIIAIIIBIVBVBVIBVIIBIBIIBIIIAIVAVAVIAVIIAVIIIAVIIIBHydrogenH11.008BerylliumBe49.012Na11Sodium22.989Li3Lithium6.9391224.312MgMagnesium19KPotassium39.102Ca2040.08CalciumSc21Scandium44.956Ti22Titanium47.90V23Vanadium50.942ManganeseMn2554.938Fe26Iron55.847Co27Cobalt58.933Ni28Nickel58.71Rh45Rhodium102.91Zn30Zinc65.37As33Arsenic74.922Se34Selenium78.96Br35Bromine79.909Kr36Krypton83.80Al13Aluminum26.981Si14Silicon28.086P15Phosphorus30.974S16Sulfur32.064Cl17Chlorine35.453Ar18Argon39.948B5Boron10.811C6Carbon12.011N7Nitrogen14.007O8Oxygen15.999F9Florine18.998Ne10Neon20.183He2Helium4.0026Rb37Rubidium85.47Sr38Strontium87.62Y39Yttrium88.905Zr40Zirconium91.22Nb41Niobium92.906Molybde-numMo4295.94Cr24Chromium51.996TechnitiumTc4399Ru44Ruthenium101.07Cd48Cadmium112.40Cu29Copper63.54PalladiumPd46106.4SilverAg47107.87Sm62Samarium150.35Ga31Gallium69.72In49Indium114.82Ge3272.59GermaniumSn50Tin118.69Sb51Antimony121.75Te52Tellurium127.60I53Iodine126.904Xe54Xenon131.30Cs55Cesium132.90Ba56Barium1137.34La57Lanthanum138.91Hf72Hafnium178.49Ta73Tantalum180.95W74Tungsten183.85Re75Rhenium186.2Os76Osmium190.2Ir77Iridium192.2Pt78Platinum195.09Au79Gold196.967Hg80Mercury200.59Tl81Thallium204.37Pb82Lead207.19Bi83Bismuth208.98Po84Polonium210At85Astatine210Rn86Radon222Uun110Fr87Francium223Ra88Radium226Ac89227ActiniumCe58Cerium140.12Pr59Praseodym-ium140.9160NdNeodym-ium144.24Pm61Prome-thium147EuropiumEu63151.96Gd64Gadolin-ium157.25Tb65Terbium158.92Dy66Dyspro-sium162.50Ho67Holmium164.93Er68Erbium167.26Tm69Thulium168.93Yb70Ytterbium173.0471LuLutetium174.97Th90Thorium232.04Pa91Procat-inium231U92Uranium238.03Np93Neptunium237Pu94Plutonium242AmericiumAm95243Cm96Curium247BerkeliumBk97247Cf98Califor-nium249Es99Einstein-ium254Fm100Fermium253Md101Mendelev-ium256102NoNobelium253Lr103Lawren-ci
本文标题:半导体制程技术导论chapter-3半导体原理
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