DDR3(HYNIX)编码规则

‘H’PartnumberLastUpdated:Nov.2008H5TQXXXXXXX-XXXHYNIXMEMORYPRODUCTFAMILYPOWERSUPPLYDENSITY&REFRESHORGANIZATIONNUMBEROFBANKSOPERATINGTEMPERATURE&POWERCONSUMPTIONSPEED(tCL-tRCD-tRP)PACKAGETYPEDIEGENERATION:VDD=1.5V&VDDQ=1.5V:VDD=1.35V&VDDQ=1.35V5:DRAMQC:512Mb,8K/64msRefresh:1Gb,8K/64msRefresh:2Gb,8K/64msRefresh:4Gb,8K/64msRefresh:8Gb,8K/64msRefresh511G2G4G8G486:x4:x8:x16:8Banks:16Banks34CLEIA:CommercialTemp1)&NormalPower:CommercialTemp1)&LowPower:ExtendedTemp2)&NormalPower:IndustrialTemp3)&NormalPower:CommercialTemp1)&1.35VDDPowerP9PAPBH8H9HAG6G7G8S5S6:DDR3-16009-9-9:DDR3-160010-10-10:DDR3-160011-11-11:DDR3-13338-8-8:DDR3-13339-9-9:DDR3-133310-10-10:DDR3-10666-6-6:DDR3-10667-7-7:DDR3-10668-8-8:DDR3-8005-5-5:DDR3-8006-6-6FMH:FBGASDP(SingleDiePackage):FBGADDP(DualDiePackage):FBGAQDP(QuadDiePackage):1st:2nd:3rd:4thMABCNote:1)CommercialTemperature:0°C~85°C2)ExtendedTemperature:-25°C~85°C3)IndustrialTemperature:-40°C~85°C4)ROHS:RestrictionOfHazardousSubstances:5th:6th:7th:8thDEFGPACKAGEMATERIALLPR:Leaded:LeadFree(ROHS4)compliant):LeadFree&HalogenFree(ROHS4)compliant)1234567891011121314PRODUCTMODET:DDR3SDRAM‘HY’PartnumberLastUpdated:Apr.2007HYXXXXXXXXXXXX-XXXHYNIXMEMORYPRODUCTFAMILYPROCESS&POWERSUPPLYDENSITY&REFRESHORGANIZATIONNUMBERofBANKINTERFACETEMPERATURESPEED(tCL-tRCD-tRP)PACKAGETYPEPOWERCONSUMPTIONDIEGENERATION:VDD=1.5V&VDDQ=1.5V5T:DDR3SDRAMQ:512Mb,8K/64msRefresh:1Gb,8K/64msRefresh:2Gb,8K/64msRefresh121G2G4816:x4:x8:x16:8Banks:16Banks341:SSTL_15BlankIE:Commercial(0:Industrial(-40:Extended(-25H7H8H9G6G7G8S5S6:DDR3-13337-7-7:DDR3-13338-8-8:DDR3-13339-9-9:DDR3-10666-6-6:DDR3-10667-7-7:DDR3-10668-8-8:DDR3-8005-5-5:DDR3-8006-6-6FMS:FBGASingleDie:FBGADDP2):FBGAStack:Normal:LowSelfRefreshPower:ReducedPowerNLK:1stGen.:2ndGen.:3rdGen.:4thGen.ZABCNotes)1.AllLead-freeandRoHScompliant~RoHS:RestrictionofHazardousSubstance2.DDP(DualDiePackage)3.AllDDR3partnumbermayalsobechangedbytheresultofnomenclaturerevisioninprogress:5thGen.:6thGen.:7thGen.:8thGen.DEFGPACKAGEMATERIALP:AllLeadFree1)(RoHScompliant)