微电子机械系统的研究进展

-4-2001120011DevelopmentofMEMSTechniqueandDevicesLiBingqianZhuChangchunLiuJunhua:(MEMS)MEMSMEMS;MEMS,MEMS,MEMS,MEMS:MEMS;;:TP212;TN301:A:1006-6977(2001)01-0004-05*1(MEMS,,MEMS1989(NSF)MicroelectronTechnologyAppliedtoElectricalMechanicalSystem,(MicromachingTechnology)NSF(DARPA,,Micro-Electro-Mechani2cal-SystemMEMSMEMS,,,,,:MEMS,21,MEMS,,MEMS::MEMS;,:,,;:MEMS,;:,,ICMEMS;:MEMS,MEMS2MEMS,MEMS,MEMS1982,PetersenProc.IEEEElectronDevicesSiliconasamechanicalmaterials,,MEMS-5-,MEMSMEMSMEMS,MEMS,2.1MEMSMEMS:IC,ICMEMS,ICIC,LIGALIGA,,m,,KOHEPW,,,600:1MEMS,IC()(),m,IC,,,,SOI,,MEMS,SOI,,,,m,LIGALithographGalvanformungundAbformug,XLIGA,1m,m,mm,,LIGA,IC,IC,,LIGALIGA,,mm,IC,LIGA,MEMS,,:;MEMSMEMS,MEMS,,,MEMS,MEMSMEMS,MEMSIC,ICMEMS,ICMEMS20300m,30,,,,2.2MEMS,MEMS,-6-2001120011,MEMS(),MEMSa1MEMS,,MEMS,:,19887,11.5m,100m1993,,120m,1200r/min,100m,0.00110r/min,,,,,,,,,,LIGALIGA,,,WisconsinGuckelGeorgiaIMM,0.8mm,4mg,601000r/min,2mm,,,1993Racine(,)1997,Dellmann,,1998,,2mm,10V,50r/minb1,,,;,E1995,10,2005,25:,;,,MotoralaYoshiiYTransducer’97SOICMOSMCU(68H05)10(A/D)(D/A)2kEPROM128RAM(Boot)ROM,MCU,c1,,,Kuehnel1994AGXL50:,3mm3mm,,BiCMOSICZimmermannSIMOXSOI,Chan-7-5g1g,(15),d1,,,,,,,,MEMSe,,(MOMEMS)TexasInstrument(TI)(DigitalMirrorDevice,DMD)1993,(Transducer’93),TIMEMSDMD,,768576,SRAM,(+10o-10o),,1995ElectronicsShow’95,TI500000,DMD,1300000DMD(XGA:12801024,HDTV1280980),DMDf1,0.25m/,0.025m,Tang,,,,,STMg1,70,Stanford,,,,DNAh1MEMSMEMS,,,MEMS,,,,MEMSMEMS,,,,,,,3MEMSMEMS-8-2001120011,MEMS,,21,MEMSMEMS,,21,MEMS,MEMS19892,(NASA)MEMS,MEMS,,MEMS,MEMS,MEMS1.25(DARPA0.81.5,2,9000)MEMS,1.1(3,8000)MEMS,MEMS7,MEMS,1989,19919019931994,(B)MEMS()(ICLIG2AEDN)1993,,(ICLIGA),,,S-863MEMS4MEMS,MEMS,,,MEMS,MEMS,MEMS,,,MEMS,,MEMSIC,IC,,,ICMEMS,IC,,MEMS,MEMSIC,MEMSMEMS,MEMS,:11,,,1111999,5:192121SmithCS1Piezoresistiveeffectingermaniumandsilicon,Phys.Rev.94(1),1954:424931PetersenK1SiliconasamechanicalmaterialsProc.IEEEElectronDevices,70(5),1982:42045741LiBingqian,ZhuChangchun,LiuJun2hua1Electrostaticforceaffectedbyapacechargelayerinsubmicronandnanometermicrostruture,J.Micromech.Microeng,9(4),1999:31932351BellTE,GennissenPTJ,DemunterDetal.Poroussiliconasasacrificialmaterial,J.Mi2cromech.Microeng,6(4),1996:36136961DiemB,ReyP,RenardS,BossonSVetal1SOI-9-NewDevelopmentandApplicationofQuartzCrystalComponentsGongMeixia:,,:;;;;:TN75212;TN713+191:B:1006-6977(2001)01-0009-03(),,,Q(),,,,VCD,,,,1,111,(GPS)()(IEC)4:(SPXO)(VCXO)(TCXO)(OCXO),,:a1,,TCXO30,100SMDTCXO2mm,53mm‘SIMOX’;frombulktosurfacemicromachin2ing,anewageforsiliconsensorsandactua2tors,SensorsandActuatorsA,4647,1995:8167.,,,11,4(2),1998:13814081,,..,4(2),1998:78-82:2000-06-21:010101