Litho-Process-Introduction

丁刘胜2009-02-10LithographyProcessIntroduction光刻工艺流程及原理的介绍WelcomeOutlineI.LithographyTechnologyHistoryandTomorrow.II.LithographGeneralIntroduction.III.LithographMachineandMaterialIntroduction.IV.Theoryofopticalimaging.V.Q&A.OutlineLithographyTech.HistoryandTomorrow1947年：贝尔实验室肖特莱等人发明了晶体管，这是微电子技术发展中第一个里程碑；1950年：结型晶体管诞生；1950年：ROhl和肖特莱发明了离子注入工艺；1951年：场效应晶体管发明；1956年：CSFuller发明了扩散工艺；1958年：德仪公司基尔比发明了集成电路，开创了世界微电子学的历史；1960年：HHLoor和ECastellani发明了光刻工艺；1962年：美国RCA公司研制出MOS场效应晶体管；1963年：F.M.Wanlass和C.T.Sah首次提出CMOS技术，今天，95%以上的集成电路芯片都是基于CMOS工艺；1964年：Intel摩尔提出摩尔定律，预测晶体管集成度将会每18个月增加1倍；；1978年，美国GCA公司推出了世界上第一台商品化的分步投影光刻机——DSW4800；1988年：16MDRAM问世，1平方厘米大小的硅片上集成有3500万个晶体管，标志着进入超大规模集成电路（ULSI）阶段；1999年：奔腾Ⅲ问世，450MHz，采用0.25μｍ工艺，后采用0.18μm工艺；2008年：Intel宣布量产采用45nｍ工艺。附图:30年前，日本尼康生产的第一台光刻是NSR1010G型光刻机集成电路发展史:TI董事长TomEngibous在我看来，只有为数不多的人——福特、爱迪生、莱特兄弟和JackKilby真正改变了世界以及我们的生活方式OutlineI.LithographyTechnologyHistoryandTomorrow.II.LithographGeneralIntroduction.III.LithographMachineandMaterialIntroduction.IV.Theoryofopticalimaging.V.Q&A.OutlineLithographGeneralIntroduction•Whatis“lithography”设计回路曝光光源掩模板光刻胶硅片(下层图形)光刻就是把设计图形准确无误的从模版上印刷到硅片上。ResistcoatresistsubstrateDeveloppositivetonenegativetoneEtchResiststripExposemask•Howtoprintthepattern?NecessaryConditions•Resist•Mask•Coater•Stepper•DeveloperLithographyTechnologyHistoryReviewINCOMINGWAFERSTEPPERINTERFACESOFTBAKEADHESIONAFTERDEVELOPINSPECTIONDEVELOPCOOLPLATEPOSTEXPOSUREBAKEALIGNANDEXPOSECOOLPLATECOOLPLATERESISTAPPLICATION来料涂粘着剂冷却涂光刻胶软烘烤冷却光刻机界面对准及曝光曝光后烘烤冷却显影显影后检验LithographGeneralIntroduction•Detailprocesssteps.NecessaryConditions•Wafer•Resist•HMDS•Cool•Bake•Mask•Light•Developer•ADI.LithographGeneralIntroductionPolypatternafterlitho,polyetchandresiststripResistpatternafterdevelopment(patternonactiveareatopography,coveredwithpoly-silicon)PrintDownPattern膜形成•扩散•CVD•金属溅射光刻工程刻蚀•Dry•Wet离子注入光刻工程是唯一定义图形的工程，因此整个制造工艺中光刻次数也决定了整个工艺的长度.•LithographyapplicationinsemiconductorLithographGeneralIntroductionLithographGeneralIntroductionFinalStructureMVNMOSPIPCAPNWELLPWELLP-Sub.IMD-2IMD-1PASSIVATIONNWELLNWELLNWELLHVPMOSLVPMOSMVPMOSHVNMOSLVNMOSPPWELLPPWELLMETAL3METAL1METAL2PWELLTCPTracksideScannersidePRB1PRB2IFBWTSEXPUNITTRSADHLHPHCPWEEOUTPORTINPORTRejectCassetteDischargePre-alignWaferStageCOTDEVPCHLHPHCPTCTSHUSBUHCPHCPTRSTCPSHUDEVDEVDEVTCTCOTLithographGeneralIntroduction小结OutlineI.LithographyTechnologyHistoryandTomorrow.II.LithographGeneralIntroduction.III.LithographMachineandMaterialIntroduction.IV.Theoryofopticalimaging.V.Q&A.OutlineLithographMachineandMaterialIntroduction•5Typesmachineinphoto.2TypesmainM/C.3TypesmetrologyM/C.Stepper:MainlyVendor:ASML(1984),NIKON(1917),CANON.(1937).Wavelength:G-Line(436nm),I-Line(365nm),DUV(248nm),ArF(193nm),F2(157nm),EUV,E-beam.Exposemode:Stepper/ScannerFunction:Exposing.Track:MainlyVendor:TEL,DNSFunction:COT,DEV,Baking,Cooling.ExposureMode一次性曝光（Ｓｔｅｐ＆Ｒｅｐｅａｔ）Scan式曝光（Ｓｔｅｐ＆Ｓｃａｎ）硅片Stage硅片投影镜头掩模板曝光所用光LithographMachineandMaterialIntroduction•5Typesmachineinphoto.2TypesmainM/C.3TypesmetrologyM/C.(ADImachine)CD-SEM:MainlyVendor:HITACHI,KLA.Function:MeasureCDSizeOVL:MainlyVendor:KLA,AccentFunction:MeasurementOVL.OM:MainlyVendor:OLYPMUS.Function:Opticschecking.LithographMachineandMaterialIntroductionCD-SEMOVLLithographMachineandMaterialIntroductionCD&OverlayMeasurementSEM即扫描电子显微镜，用电子束在硅片上进行扫描，然后捕捉在硅片表面上反射的二次电子，并测量其能量的分布，以获取图形的信息。CD-SEM:CriticalDimensionSEM，即测长SEM，专用于测量硅片上图形的尺寸10nm主电子束二次电子固态试样混合器检知器电极电极主电子束硅片光刻胶-CDSEMLithographMachineandMaterialIntroductionBOXMARKBARMARK(1)BARMARK(2)Pre-layerCurrentlayerPR10umOverlay（套刻精度）:检查层与层之间连接的准确度-OVL•Photomaterial.3mainlyTypesmaterial.(HMDS,Developer,PR)PhotoResist(PR):光阻.感光材料,用于接受图形.常见Vendor.3maincomponents:Solvent50-90%byweightResin10-40%byweightSensitizer1-6%byweightPlusadditives:SurfactantsPre-poisonersDyeetc.ComponentRateResistType:2I-Line&DUVLithographMachineandMaterialIntroductionDeveloper:显影剂,用于显影.(TOK,FUJIFILM,etc.)HMDS:粘合剂,主要作用是粘合光阻与substrate.(AUECC,TOK,etc.)LithographMachineandMaterialIntroductionCompositionofDNQBasedResistsPhotoAcidGenerator(PAG)BasedResin—PolyHydroxyStyrene(PHS)resinsaremostlyusedasbasedresin.Solvent—Safersolventsystemarerequired.Other—Dyes,Surfactants,Dissolutionenhancer,etcCompositionofCAResistsPhotoActiveCompound(PAC)—DNQcompoundsaremostlyusedasPAC.BasedResin—Novolakresinsaremostlyusedasbasedresin.Solvent—Safersolventsystemarerequired.Other—Dyes,Surfactants,etcSensitizerN2SO2ROSensitizerI-LINEPhotoresistDUVPhotoresistSO2RHCOOHSO2RHCOON(CH3)4＋－ICAResin-H2OTMAH-H2OTMAHmOH(CH3)nCH2m(CH3)nCH2O－＋N(CH3)4MaskResistExposedPart(CH3)4NOH＋－(TMAH:TetramethylammoniumHydroxide)(CH3)4NOH＋－(TMAH:TetramethylammoniumHydroxide)-H2OTMAH-H2OTMAHResistChemistry•I-LinePhotoresistReactionLithographMachineandMaterialIntroductionResistChemistryLithographMachineandMaterialIntroduction•DUVPhotoresistReactionChemicalamplifiedresists:delay,contamination,poisoningAciddiffusionduringdelaybetweenexposureandPEBCDchangesOH-OH-OH-OH-OH-H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+H+OH-OH-OH-OH-OH-Reactionwithbasecontaminantsinthe