电子束、离子辅助和离子束溅射三种工艺对光学薄膜性能的影响Ξ

159Vol.15,No.920039HIGHPOWERLASERANDPARTICLEBEAMSSep.,2003:100124322(2003)0920841204X,,(,201800):,,,ZygoX,,:;;;:O484.4:A,,(E2beam)(ionassisteddeposi2tion,IAD)(ionbeamsputtering,IBS),,:,,,,,,,,,,,,,,,,,Martin,Macleod[1],Mcneil[2,3][4][5],[68]19,2040,[9],[7,10],,10eV,100,,,,,1,ZZXS-700()ZZXS-500()1,,(99.99%);(99.99%),1,ZrO2,SiO2Al2O322.1,,TiO2,ZrO2Al2O3,[11]n=1+R1-Rn0ns(1)X:2003203221;:2003206203:863:(19702),,,,;8002211©1995-2005TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.1Table1ExperimentconditionandthepreparedthinfilmsfilmsubstrateE2beamIADIBSARsapphireK9300;p=2.010-3Pa;12nm/sroomtemperature;p=2.210-2Pa;voltage:180V;VO2=10cm3;12nm/sroomtemperature;p=2.210-2Pa,(nO2nAr=21);0.010.04nm/sTiO2sapphireK9300;p=2.010-3Pa,(pO2=2.010-2Pa);0.5nm/sroomtemperature;p=2.210-2Pa;voltage:180V;VO2=10cm3;0.5nm/sZrO2K9300;p=2.010-3Pa;1nm/sroomtemperature;p=2.210-2Pa;voltage:180V;VO2=10cm3;1nm/sroomtemperature;p=2.210-2Pa,(nO2nAr=21);0.010.02nm/sAl2O3K9300;p=:2.010-3Pa;12nm/sroomtemperature;p=2.210-2Pa;voltage:180V;VO2=10cm3;12nm/sroomtemperature;p=2.210-2Pa,(nO2nAr=21);0.020.03nm/s:R,(,;,),n0=1(),ns,K9,ns=1.52,22Table2RefractiveindexofseveralcoatingmaterialsunderthedifferenttechniquestechniquenTiO2nZrO2nAl2O32.25(550nm)1.62(500nm)E2beam2.19(850nm)1.90(1000nm)1.60(900nm)2.45(550nm)2.08(1000nm)1.65(500nm)IAD2.25(850nm)1.63(900nm)IBS2.10(1000nm)1.65(900nm)2,,,,,,,,,,,,2.2,:,,3(RMS),,,6%44%,,63%13:,,,,,,,,,,24815©1995-2005TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.Fig.1SurfacemorphologyofthinfilmsmeasuredbyAFM13Table3Surfaceroughnessofthinfilmsroughness(beforecoating)RMSroughness(aftercoating)RMSratioE2beam0.778nm1.266nm63%IAD0.834nm0.783nm-6%IBS2.322nm1.308nm-44%2.3,,,,(SurfaceThermalLensing,STL),[12],,44Table4WeakabsorptionofthinfilmsmeasuredbysurfacethermallensingNo.substratefilmtechniquesignalabsorption0sapphirecalibratedIBS1.410-40.501sapphireARIBS1.110-71.410-42sapphireARIAD3sapphireTiO2IAD4sapphireARE2beam5sapphireTiO2E2beam4,,1.410-4,,,,,,,,,,,,2.4X(X2rayDiffraction,XRD),2X,2(a)2(c)23,37,,X,3,,,,,;,,,3489:©1995-2005TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.Fig.2StructureofthinfilmsmeasuredbyX2raydiffraction2X,nm/s,,10-2nm/s,,,,,,,:[1]MartinPJ,MacleodHA,NetterfieldRP,etal.Ion2beam2assisteddepositionofthinfilms[J].ApplOpt,1983,22(1):178184.[2]McneilJR,BarronAC,WilsonSR,etal.Ion2saaiteddepositionofopticalthinfilms:lowenergyvshighenergybombardment[J].ApplOpt,1984,23(4):552559.[3]McneilJR,Al2JumailyJA,JunglingKC,etal.PropertiesofTiO2andSiO2thinfilmsdepositedusingionassisteddeposition[J].ApplOpt,1985,24(4):486489.[4],,.Ta2O5[J].,1988,8(5):454458.(ZhouJL,ZhangY,YangDL.Ta2O5waspreparedbyLowenergyIAD.ActaOpticaSinica,1988,8(5):454458)[5],.[J].,1992,4(2):245250.(TangXF,FanZX.Theopticalchar2acteristicsofoxidesthinfilmsbyIAD.HighPowerLaserandParticleBeams,1992,4(2):245250)[6]EnsingerW.Lowenergyionassistduringdeposition2aneffectivetoolforcontrollingthinfilmmicrostructure[J].NuclearInstrumentsandMethodsinPhysicsResearchB,1997,127/128:796808.[7],,.[J].,2001,23(5,6):127133.(XiaoquanDY,SunDX,FanB.Opti2calcommunicationthinfilmsandcoatingmachine.OpticalInstrument,2001,23(5,6):127133)[8],.[J].,2001,23(5,6):134137.(WangML,ZengtianQZ.Thepreparationofhighprecisionopticalthinfilms.OpticalInstrument,2001,23(5,6):134137)[9]WilleyRR.Practicaldesignandproductionofopticalthinfilms[M].NewYork:MarcelDekkerInc,1996.109.[10]RossnagelBT.Newhighrateautomateddepositionsystemforthecomplexcoatings[J].SystemDescriptioninOpticalInterferenceCoatins,1998,9:7274.[11][M].:,1976.79.(OpticalThinFilms.Shanghai:ShanghaiPeoplePublishingPress,1976.79)[12],,,.1315nm[J].,2000,12(s0):8790.(WangYJ,HuHY,LiQG,etal.ThestudyofweakabsorptionofthehighreflectionthinfilmscoatedontheSiplatesat1315nmbySTL.HighPowerLaserandParticleBeams,2000,12(s0):8790)PropertycomparisonofopticalthinfilmspreparedbyE2beam,ionassisteddepositionandionbeamsputteringWANGYing2jian,LIQing2guo,FANZheng2xiu(ShanghaiInstituteofOpticsandFineMechanics,theChineseAcademyofSciences,P.O.Box8002211,Shanghai201800,China)Abstract:Theopticalthinfilms,includingsinglethinfilmsofZrO2,TiO2,Al2O3andARcoatings,wererespectivelypreparedbyE2beam,ionassisteddepositionandionbeamsputtering.Thenthesethinfilmspropertiesweremeasuredbyseveralmethods,suchasprofilemeter,atomicforcemicroscopy,surfacethermallensingandX2raydiffraction.Thethinfilmsrefractiveindex,surfacerough2ness,absorptionandmicro2structureweregivenanddiscussed.Finally,theconclusionwasdrawn:theoptionofpropertechniquetofab2ricateopticalthinfilmsisionassisteddeposition.Keywords:E2beam;Ionassisteddeposition;Ionbeamsputtering;Thinfilmproperties44815©1995-2005TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.