0.18um-eFlash-Process-Introduction(1243)-20070307

0.18umeFlashProcessIntroductionMTD/HV2Nov.09,2006TunneloxideControlGateONOP+P+DrainSelectGateSourceFloatGateP+DNWSG(0.3)CG(0.26)P1space(0.22)CT(0.22)STI0.25AA0.23Spacer0.20.18pFlashCellStructureXpitch:0.48Ypitch:1.2Cellarea:0.576CommonsourceDrainDrainDrainDrainSGSGSGSGCGCGCGCG0.18pFlashCellOperationConditionsOperationDrain(V)SG(V)CG(V)Source(V)DNW(V)RemarkProgramVccint-6.8Vccint-8.8Vccint+8.8Vccint-VtpVccintCustomerdefine-6.8-8.88.800WATconditionEraseFloating10.5-8.810.5-Vtp10.5CustomerdefineFloating10.5-8.810.510.5WATconditionReadVcc-1.2-1.5Vcc-1.3VccVccCustomerdefine-1.2-1.5-1.300WATconditionDNWCellSGTr.TWNHVNHVPPWNW1.8&3.3VNMOS1.8&3.3VPMOS100A0.3um150A0.6um150A0.55umPWH150A0.55um150A0.9um100A0.26umHVPZHVNZ150A1umPWHPWHDeviceScheme1.DeviceTableBriefPoly1:0530DPY1000-LPoly2:0620UPY2000•Cosalicide2P3Mprocesswithstandard0.18logicdevices•Total31reticlesand31photolayers(excludingzerolayer)PWHsurroundHVNZforisolation1).STIFormation(logicflow)•StartingMaterialP-(100),8-12ohm-cm•PadOxidation0920POX0110•AASiNdeposition0760SIN1625•(1)AAphoto(DUV)DefineActiveDiffusionArea(120AA)•STIetch/PRstrip3400ASitrenchdepth•STILinerpreclnNCR1DH75ARCAM•STILinerOx1000LOX0200•LinerOxAnneal1100ANN120M•TrenchfillSTI56-5800•STIHDPAnneal1000RTA020S•(2)ARphoto(I-line)AAReverse(121AA)•ARetch/PRstrip/STICMP•SiN/OxremovalNLH90AHPO2450ASC1M/NLH60A•SACOxpreclnNCR1DH100ARCAM•SACOx0920POX01102.ProcessFlowBrief---STICellPeriphery垫氧化层：做氮化硅缓冲层以减小应力氧化阻挡层，氮化物不能被氧化，蚀刻后的区域选择性氧化/CMPpolishstopP221STIProcessFlowBrief---HVwell2).DNW/HVPW/CellwellFormation(FlashFlow)•(3)DNWPhoto(I-Line)Definearray,HVP,HVNtpw(292AA)•DNWIMPP160M10E3T00/P800K10E3T00•P350K15E2T00/P220K15E2T00•P100K10E2T00/F060K25E2T00•PRstrip•(4)VTPHPhoto(I-line)HVPZVtadjustment(395AA)•VTPHIMPF060K11E2T00•PRStrip•(5)HVPWPhoto(I-line)DefineHVN,HVNtpw(491AA)•HVPWIMPB300K15E3T07/B220K55E2T07•B110K15E2T07/B065K16E2T07•PRstrip•BlanketVtImpF060K55E1T00•OxremoveNLH60ACellPeripheryDNWDNWHVPWHVNZHVNHVPZHVPHVNtpwHVPWNeedoptimizeForHVNZdeviceVtadjustProcessFlowBrief---HVwell(cont’)•HVgateOxpreclnNCR1DH15ARCAM•HVgateoxidation0920GOX0120•(6)TIMPhoto(DUV)DefinecellCGVtadjustment(394AA)•TIMIMPP180K12E3T00/P100K18E3T00•P065K65E2T00•PRstrip•(7)TOWPhoto(I-line)Definecell(CG+SG)Vtadjustment(320AA)•CellVtIMPP100K60E2T00/F060K10E2T00•Oxideetch/PRstripNLB80ASGPeripheryDNWDNWHVPWHVNZHVNHVPZHVPHVNtpwHVPWCellCGCriticallayer,only0.12umspacetoSGdevice;CGVtabout2.3vandSGVtabout1.4vProcessFlowBrief---Poly13).Poly1Formation(flashflow)•PreTunnelOxCleanNCR1DH15ARCAM•TunnelOxidation0950TUN0100•Poly1(insitudoped)dep.0530DPY1000-L•P31conc6E20(RsP1~250ohm/sq)•SINCoat/SIONdep.0760SIN1000/FEDARC320•(8)Poly1Photo(DUV)DefineP1area,exceptlogicarea(133AA)•SINhardmasketch/PRstrip•SpacerSINCoat0760SIN1000-A•SpacerSINetch/PRstrip•Poly1etch•SINstripN1HPO1800ASC1(remainOxconcern)•ONOFormation0780HTO0050/0650SIN0060/0780HTO0065•(InLVlogic,poly1isetchedawayandONOdirectlycoversSisub)SGPeripheryDNWDNWHVPWHVNZHVNHVPZHVPHVNtpwHVPWCellCGProcessFlowBrief---LVwell4).LVwellandONOFormation(logicdevicefollowFab’s0.18umlogic)•(9)LVPWPhoto(I-line)Define1.8V/3.3VNMOS(191AA)•LVPWIMPB160K15E3T00/B025K44E2T00•D180K11E3T00•PRstrip•(10)LVNWPhoto(I-line)Define1.8V/3.3VPMOS(192AA)•LVNWIMPP440K15E3T00/P140K50E2T00•A170K90E2T00•PRstrip•NWAnneal1000RTA010S•(11)ONOPhoto(I-line)Definelogicgateoxarea(321AA)•ONOetchNLB80A/PFA18-ONO01/NLB150A•PRStrip(remainOxcontroltoavoidGOXthinning)NWPWHVNZPMOS18PMOS33NMOS18NMOS33ProcessFlowBrief---Poly25).CGFormation(flashflow)•3.3vGateOxpreclnNCRRCAM•3.3vGateOxdep.0800WGO0048-T•(12)DGPhoto(I-line)Open1.8vthingatearea(131AA)•Oxidedip/PRStripNLB75A•1.8vGateOxpreclnNPRRM20•1.8vGateOxdep.0750WGO0026-T•Poly2(U-poly)dep.0620UPY2000SGPeripheryDNWDNWHVPWHVNZHVNHVPZHVPHVNtpwHVPWCellCGNWPWHVNZPMOS18PMOS33NMOS18NMOS33ProcessFlowBrief---Poly2(cont’)•(13)N+PolyPhoto(I-line)DefinePolyResistance(412AA)•N+PolyIMPP030K47E5T00•PRstrip•N+PolyAnneal1000RTA010S•(14)CGPhoto(DUV)DefineCG/SGHVDeviceGate(330AA)•CGetch/PRstrip•CGreoxidation1100RTO100A•HVNLDDblanketIMPP060K18E3T30R445•(15)HVDDPPhoto(I-line)HVPMOSLDDIMP(313AA)•DDPIMPB025K25E3T00•PRstrip•(16)CellS/DPhoto(DUV)CellareaexceptSGdrainside(202AA)•CellS/DIMPF050K10E5T00•PRstrip•CellS/DIMPAnneal0950RTA010S•HVandCellspacerdep.0680TEH1000•SpaceretchProcessFlowBrief---Poly2(cont’)SGPeripheryDNWDNWHVPWHVNZHVNHVPZHVPHVNtpwHVPWCellCGHVNLDDBlanketImpDDPImp:HVPLDD(cellCG/SG&HVPMOS)CellS/DImp:CellexceptSGdrainsideSGPeripheryDNWDNWHVPWHVNZHVNHVPZHVPHVNtpwHVPWCellCGProcessFlowBrief---Poly2(cont’)6).PolyGateFormation(followFab’sStandard0.18umlogicflow)•SIONCoatFEDARC320•(17)PolyGatePhoto(DUV)DefineLVlogicMOSgate/HVP1contact(130AA)•PolyGateetch/PRstrip•SIONremoveNLH5AHPO550ASC1•Gatereoxidation1015RTO021A•(18)LVNLDD1Photo(I-line)Open1.8vNLDDarea(116AA)•1.8vNLDDPocketIMPD130K25E3T30R445•1.8vNLDDIMPA003K80E4T00•PRstrip•(19)LVPLDD1Photo(I-line)Open1.8vPLDDarea(113AA)•1.8vPLDDPocketIMPA130K30E3T30R445•1.8vPLDDIMPF005K20E4T00•PRstrip•(20)LVPLDD2Photo(I-line)Open3.3vPLDDarea(115AA)•3.3vPLDDIMPF040K45E3T00•PRstrip•PLDD