仪表900的标定步骤

©2002FairchildSemiconductorCorporationRev.B,June2002SSP7N60B/SSS7N60BSSP7N60B/SSS7N60B600VN-ChannelMOSFETGeneralDescriptionTheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevicesarewellsuitedforhighefficiencyswitchmodepowersupplies.Features•7.0A,600V,RDS(on)=1.2Ω@VGS=10V•Lowgatecharge(typical38nC)•LowCrss(typical23pF)•Fastswitching•100%avalanchetested•Improveddv/dtcapability•TO-220Fpackageisolation=4.0kV(Note6)AbsoluteMaximumRatingsTC=25°Cunlessotherwisenoted*DraincurrentlimitedbymaximumjunctiontemperatureThermalCharacteristicsSymbolParameterSSP7N60BSSS7N60BUnitsVDSSDrain-SourceVoltage600VIDDrainCurrent-Continuous(TC=25°C)7.07.0*A-Continuous(TC=100°C)4.44.4*AIDMDrainCurrent-Pulsed(Note1)2828*AVGSSGate-SourceVoltage±30VEASSinglePulsedAvalancheEnergy(Note2)420mJIARAvalancheCurrent(Note1)7.0AEARRepetitiveAvalancheEnergy(Note1)14.7mJdv/dtPeakDiodeRecoverydv/dt(Note3)5.5V/nsPDPowerDissipation(TC=25°C)14748W-Derateabove25°C1.180.38W/°CTJ,TSTGOperatingandStorageTemperatureRange-55to+150°CTLMaximumleadtemperatureforsolderingpurposes,1/8fromcasefor5seconds300°CSymbolParameterSSP7N60BSSS7N60BUnitsRθJCThermalResistance,Junction-to-CaseMax.0.852.6°C/WRθCSThermalResistance,Case-to-SinkTyp.0.5--°C/WRθJAThermalResistance,Junction-to-AmbientMax.62.562.5°C/WTO-220SSPSeriesGSDSDGTO-220FSSSSeriesGSDRev.B,June2002SSP7N60B/SSS7N60B©2002FairchildSemiconductorCorporation(Note4)(Note4,5)(Note4,5)(Note4)ElectricalCharacteristicsTC=25°CunlessotherwisenotedNotes:1.RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature2.L=15.7mH,IAS=7.0A,VDD=50V,RG=25Ω,StartingTJ=25°C3.ISD≤7.0A,di/dt≤300A/µs,VDD≤BVDSS,StartingTJ=25°C4.PulseTest:Pulsewidth≤300µs,Dutycycle≤2%5.Essentiallyindependentofoperatingtemperature6.OnlyforbacksideinViso=4.0kVandt=0.3sSymbolParameterTestConditionsMinTypMaxUnitsOffCharacteristicsBVDSSDrain-SourceBreakdownVoltageVGS=0V,ID=250µA600----V∆BVDSS/∆TJBreakdownVoltageTemperatureCoefficientID=250µA,Referencedto25°C--0.65--V/°CIDSSZeroGateVoltageDrainCurrentVDS=600V,VGS=0V----10µAVDS=480V,TC=125°C----100µAIGSSFGate-BodyLeakageCurrent,ForwardVGS=30V,VDS=0V----100nAIGSSRGate-BodyLeakageCurrent,ReverseVGS=-30V,VDS=0V-----100nAOnCharacteristicsVGS(th)GateThresholdVoltageVDS=VGS,ID=250µA2.0--4.0VRDS(on)StaticDrain-SourceOn-ResistanceVGS=10V,ID=3.5A--1.01.2ΩgFSForwardTransconductanceVDS=40V,ID=3.5A--8.2--SDynamicCharacteristicsCissInputCapacitanceVDS=25V,VGS=0V,f=1.0MHz--13801800pFCossOutputCapacitance--115150pFCrssReverseTransferCapacitance--2330pFSwitchingCharacteristicstd(on)Turn-OnDelayTimeVDD=300V,ID=7.0A,RG=25Ω--3070nstrTurn-OnRiseTime--80170nstd(off)Turn-OffDelayTime--125260nstfTurn-OffFallTime--85180nsQgTotalGateChargeVDS=480V,ID=7.0A,VGS=10V--3850nCQgsGate-SourceCharge--6.4--nCQgdGate-DrainCharge--15--nCDrain-SourceDiodeCharacteristicsandMaximumRatingsISMaximumContinuousDrain-SourceDiodeForwardCurrent----7.0AISMMaximumPulsedDrain-SourceDiodeForwardCurrent----28AVSDDrain-SourceDiodeForwardVoltageVGS=0V,IS=7.0A----1.4VtrrReverseRecoveryTimeVGS=0V,IS=7.0A,dIF/dt=100A/µs--415--nsQrrReverseRecoveryCharge--4.6--µC©2002FairchildSemiconductorCorporationRev.B,June2002SSP7N60B/SSS7N60B0510152025303540024681012VDS=300VVDS=120VVDS=480V※Note:ID=7.0AVGS,Gate-SourceVoltage[V]QG,TotalGateCharge[nC]10-1100101050010001500200025003000CossCiss=Cgs+Cgd(Cds=shorted)Coss=Cds+CgdCrss=Cgd※Notes:1.VGS=0V2.f=1MHzCrssCissCapacitance[pF]VDS,Drain-SourceVoltage[V]0.20.40.60.81.01.21.410-1100101150℃※Notes:1.VGS=0V2.250μsPulseTest25℃IDR,ReverseDrainCurrent[A]VSD,Source-Drainvoltage[V]0510152025012345VGS=20VVGS=10V※Note:TJ=25℃RDS(ON)[Ω],Drain-SourceOn-ResistanceID,DrainCurrent[A]24681010-1100101150oC25oC-55oC※Notes:1.VDS=40V2.250μsPulseTestID,DrainCurrent[A]VGS,Gate-SourceVoltage[V]10-110010110-1100101VGSTop:15.0V10.0V8.0V7.0V6.5V6.0V5.5VBottom:5.0V※Notes:1.250μsPulseTest2.TC=25℃ID,DrainCurrent[A]VDS,Drain-SourceVoltage[V]TypicalCharacteristicsFigure5.CapacitanceCharacteristicsFigure6.GateChargeCharacteristicsFigure3.On-ResistanceVariationvsDrainCurrentandGateVoltageFigure4.BodyDiodeForwardVoltageVariationwithSourceCurrentandTemperatureFigure2.TransferCharacteristicsFigure1.On-RegionCharacteristics©2002FairchildSemiconductorCorporationRev.B,June2002SSP7N60B/SSS7N60B25507510012515002468ID,DrainCurrent[A]TC,CaseTemperature[℃]10010110210310-210-110010110210µsDC10ms1ms100µsOperationinThisAreaisLimitedbyRDS(on)※Notes:1.TC=25oC2.TJ=150oC3.SinglePulseID,DrainCurrent[A]VDS,Drain-SourceVoltage[V]-100-500501001502000.00.51.01.52.02.53.0※Notes:1.VGS=10V2.ID=3.5ARDS(ON),(Normalized)Drain-SourceOn-ResistanceTJ,JunctionTemperature[oC]-100-500501001502000.80.91.01.11.2※Notes:1.VGS=0V2.ID=250μABVDSS,(Normalized)Drain-SourceBreakdownVoltageTJ,JunctionTemperature[oC]TypicalCharacteristics(Continued)Figure9-1.MaximumSafeOpe