Michael quirk_半导体制造技术-第15章_光刻_光刻胶显影和先进的光刻技术

©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaSemiconductorManufacturingTechnologyMichaelQuirk&JulianSerda©October2001byPrenticeHallChapter15Photolithography:ResistDevelopmentandAdvancedLithography©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerda©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaObjectivesAfterstudyingthematerialinthischapter,youwillbeableto:1.ExplainwhyandhowapostexposurebakeisdoneforconventionalandChemicallyamplifiedDUVresist.2.DescribethenegativeandpositiveresistdevelopmentprocessforconventionalandchemicallyamplifiedDUVresist.3.Listanddiscussthetwomostcommonresistdevelopmentmethodsandthecriticaldevelopmentparameters.4.Statewhyahardbakeisdoneafterresistdevelopment.5.Explainthebenefitsofapost-developinspection.6.Listanddescribethefourdifferentalternativesforadvancedlithography,includingthechallengesforintroducingeachalternativeintoproduction.7.Describeandgivethebenefitfortheadvancedresistprocessoftopsurfaceimaging.©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaEightBasicStepsofPhotolithographyStepChapterCovered1.Vaporprime132.Spincoat133.Softbake134.Alignmentandexposure145.Post-exposurebake156.Develop157.Hardbake158.Developinspect15Table15.1©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaPostExposureBake•DeepUVExposureBake–TemperatureUniformity–PEBDelay•ConventionalI-LinePEB©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaAmineContaminationofDUVResistleadingto“T-top”FormationPAGPAGPAGPAGPAGPAGPAGPAGH+H+H+H+H+H+H+H+H+H+}RegionofunexposedphotoresistNeutralizedphotoresistAcid-catalyzedreactionofexposedresist(postPEB)DevelopmentResistT-toppingFigure15.1©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaReductionofStandingWaveEffectduetoPEB(d)ResultofPEBPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPAC(c)PEBcausesPACdiffusionPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACUnexposedphotoresistExposedphotoresist(b)StriationsinresistPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACStandingwaves(a)ExposuretoUVlightFigure15.2©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaDevelop•NegativeResist•PositiveResist•DevelopmentMethods•ResistDevelopmentParameters©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaPhotoresistDevelopmentProblemsXXXUnderdevelopIncompletedevelopCorrectdevelopSevereoverdevelopResistSubstrateFigure15.3©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaNegativeResistCrosslinkingUVCrosslinksUnexposedresistExposedresistFigure15.4©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaDevelopmentofPositiveResistResistexposedtolightdissolvesinthedevelopchemical.UnexposedpositiveresistCrosslinkedresistFigure15.5©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaDevelopmentMethods•ContinuousSprayDevelopment•PuddleDevelopment©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaResistDevelopmentwithContinuousSprayVacuumchuckSpindleconnectedtospinmotorTovacuumpumpSprayDevelop-RinseLoadStationTransferStationVaporPrimeResistCoatEdge-beadRemovalSoftBakeCoolPlateCoolPlateHardBakeWaferTransferSystem(a)Wafertracksystem(b)DeveloperspraydispenserFigure15.6©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaPuddleResistDevelopment(d)Spindry(c)DIH2Orinse(b)Spin-offexcessdeveloper(a)PuddledispenseDeveloperdispenserPuddleformationFigure15.7©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaResistDevelopmentParameters•DeveloperTemperature•DeveloperTime•DeveloperVolume•Normality•Rinse•ExhaustFlow•WaferChuck©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaHardBake•CharacteristicsofHardBake:–Post-DevelopmentExposure–EvaporatesResidualSolventinPhotoresist–HardenstheResist–ImprovesResist-to-WaferAdhesion–PreparesResistforSubsequentProcessing–HigherTemperaturethanSoftBake,butnottoPointWhereResistSoftensandFlows•ResistHardeningwithDeepUV©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaSoftenedResistFlowatHighTemperaturePhotoresistFigure15.8©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaDevelopInspect•Post-DevelopInspectiontoFindDefects•FindDefectsbeforeEtchingorImplanting•PreventsScrap•CharacterizesthePhotoProcessbyProvidingFeedbackRegardingQualityoftheLithographyProcess•DevelopInspectReworkFlow©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaAutomatedInspectionToolforDevelopInspectPhotographcourtesyofAdvancedMicroDevices,LeicaAutoInspectionstationPhoto15.1©2001byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaDevelopInspectReworkFlow1.Vapo