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AdvancedDisplayMay.2010112、LED:(SSL),、LED20。SSL,。———,。:;、LED;;:TN312+.8:BTheDevelopmentCourseandProspectofBlueandGreenLEDChipTechnologyLIURong(WuhanHCSemiTekCo.,Ltd.,WuhanHubei430223,China)Abstract:FacingthecomingeraofSolidStateLighting(SSL)revolution,blueandgreenLEDtechnologyadvanceshavebeenreviewedforthelast20years.Fundamentalmaterialsphysicsanddevicesphysicshavebeenintroducedforbetterunderstandingofthetechnologyevolution.TodrivetheSSLapplications,futuretechnologydevelopmentdirectionshavebeendiscussed.Keywords:SSL;blueandgreenLED;materialsphysics;technologyreview(,430223)、1、LEDLEDP/N1。1,240nmeV)(eV)≈:2010-04-23201AdvancedDisplayMay.20101121III,III-V,,,nm)。、LEDIIIGaNInN、AlNAlGaInN2。、LEDInxGa1-xNGaNInxGa1-xNInNx3.4eVGaN0.7eVInN。GaNInN。InxGa1-xNInNx15%。2InNInN30%InGaN。InNInGaN。90IIIAlGaInP、LED。21。IIImetal-organicchemi-calvapordepositionMOCVD。MONH3。GaCH33+NH3→GaN+CH4。GaN32。1GaN300K3.39eV1[1]2LED,(),()。,InGaNLED[1]IIIIVV2BCN3AlSiP4GaGeAs5InSnSb、202AdvancedDisplayMay.20101121,240nmeV)3.39(eV)≈365nm)2GaNp-n-。LED。GaNAlNInN3。GaN。GaNc-GaN“”。GaNc-c-3c-。GaNLED41GaN2n-GaNnGaN3InGaN/GaN4p-GaN。InGaN/GaN。pnMgSiMgGaNGaMgGaSiGaSiGa3GaN,a,c(eV)(300K)3.39[2](300K)0.20mo[3](300K)0.8mo[4](cm-3)n-p-1016~4×10201016~6×1018[5](°C)2,500[6](300K)a(A觷)c(A觷)3.188435.18524[7](Wcm-1°C-1)1.3[8](300K)a(×10-6K-1)c(×10-6K-1)5.593.17[9](GPa)210±10[10]2GaNAlNGaNInN(300K)a(A觷)c(A觷)3.11144.97923.18845.18523.53785.7033(eV)(300K)6.23.390.7~1.9(300K)a(×10-6K-1)c(×10-6K-1)4.25.35.593.175.73.7(A觷)1.891.942.15(eV)2.882.241.93(°C)3,0002,5001,100(g/cm3)3.266.106.99(GPa)(300K)210210±101403III、203AdvancedDisplayMay.2010112。4~8μm1μm/8。MOCVDGaNLED。、LED51n-GaN2NiAuITO3pn45。、。、、、。GaNLED+/-。GaAs。2、LED2.1I-V、LED2.4V20mAVf3.0~3.4V14×14mil26GaN。2.2714×14mil2LED。20℃80℃7aLED522nm527nm7b25%7c3.23V2.98V。。GaN。150℃GaN、LED。20~30%10~20%。。。4GaNLED5GaNLED614×14mil2LEDI-V、204AdvancedDisplayMay.20101122.3814×14mil2LED。534nm2mA522nm30mA。。。9。--。2mA30mA---。33.1p-nGaN(1970~1993)1970J.Pankove[11]GaNGaN。p-GaN。2080AkasakiA-(a)(b)(c)714×14mil2LED89,MQW,,、205AdvancedDisplayMay.2010112mano[12,13,14]AlNMOCVDGaN。MgGaNp-GaNGaNp-n。GaNLED。Nichia()Nakamura[15,16]GaNMOCVDMgGaNp。1993NichiaGaNLED。3.2(1993~2000LED。LEDInGaN/GaN。MOCVDIn-GaN。1LED1995[17]2LED。3.3、(2000)、LED。、。。1ITONiAu25%25%[18,19,20]2V103GaN/11。、、。。、LEDLED、50%。4、LED20。。LED。LED123。10p-GaN11PSSGaN、206AdvancedDisplayMay.20101124.1LED。LED10。1GaNMOCVD2243。10LEDLED。4.2LED25%50%。。。12。MOCVDMQW。12。4.3。MQW。LED、。5GaN、LED、———。。10GaN、LED[1]F.A.Ponce,D.P.Bour.Nature386,351(1997).[2]T.P.Chow,etal.Mater.Res.Soc.Symp.Proc.423,69(1996).[3]V.Bougrov,M.E.Levinshtein,S.L.Rumyantsev,A.Zubrilov.InPropertiesofAdvancedSemiconductorMaterialsGaN,AlN,InN,BN,SiC,SiGe.Eds.M.E.Levinshtein,S.L.Rumyantsev,M.S.Shur,JohnWiley,Sons,Inc.,NewYork,1-30(2001).[4]J.I.Pankove,S.Bloom,G.Harbeke.RCARev.36,163(1975).[5]D.Doppalapudi,T.D.Moustakas,InHandbookofThinFilmMaterials.H.S.Nalwa(Ed.),4,57(2002).[6]S.Porowski.Mater.Sci.Eng.B44,407(1997).[7]R.R.Reeber,K.Wang.Mater.Res.Soc.Symp.Proc.622,T6.35.1(2000).[8]E.K.Sichel,J.I.Pankove,J.Phys.Chem.Solids38,330(1977).[9]W.Qian,M.Skowronski,G.R.Rohrer.Mater.Res.、207AdvancedDisplayMay.2010112Soc.Symp.Proc.423,475(1996).[10]S.O.Kucheyev,J.E.Bradby,J.S.Williams,C.Jaga-sish,M.Toth,M.R.Phillips,M.V.Swain,Appl.Phys.Lett.77,3373(2000).[11]J.I.Pankove,E.A.Miller,J.E.Berkeyheiser,GaNelectroluminescentdiodes.RCARev.32,383(1971).[12]H.Amano,N.Sawaki,I.Akasaki,Y.Toyoda.Appl.Phys.Lett.48,353(1986).[13]I.Akasaki,H.Amano,Y.Koide,K.Hiramatsu,N.Sawaki.J.Cryst.Growth98,209(1989).[14]H.Amano,M.Kito,K.Hiramatsu,I.Akasaki.Jpn.J.Appl.Phys.28,L2112(1989).[15]S.Nakamura.Jpn.J.Appl.Phys.30,L1705(1991).[16]S.Nakamura,T.Mukai,M.Senoh,N.Iwasa.Jpn.J.Appl.Phys.31,L139(1992).[17]S.Nakamura,M.Senoh,N.Iwasa,S.Nagahama.Jpn.J.Appl.Phys.34,L797(1995).[18]Y.C.Lin,et.al.IEEEPhotonicsTechnol.Lett.14,1668(2002).[19]T.Margalith,O.Buchinsky,D.A.Cohen,A.C.Abare,M.Hansen,S.P.DenBaars.Appl.Phys.Lett.74,3930(1999).[20]S.R.Jeon,Y.H.Song,H.J.Jang,G.M.Yang,S.W.Hwang,S.J.Son.Appl.Phys.Lett.78,3265(2001).:1976-)、。E-mailrliu.hc@gmail.com。、!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!20105。“、”。LED。60、、。20503,500m2、。LEDLEDLED。LEDLED。LED、、、、250LED。、、。“LED、‘、、、’。、”LED208
本文标题:蓝_绿光LED芯片技术发展历程及展望
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