2SC2873中文资料

2SC28732006-11-101TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)2SC2873PowerAmplifierApplicationsPowerSwitchingApplications•Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A)•High-speedswitchingtime:tstg=1.0μs(typ.)•Smallflatpackage•PC=1.0to2.0W(mountedonaceramicsubstrate)•Complementaryto2SA1213AbsoluteMaximumRatings(Ta=25°C)CharacteristicsSymbolRatingUnitCollector-basevoltageVCBO50VCollector-emittervoltageVCEO50VEmitter-basevoltageVEBO5VCollectorcurrentIC2ABasecurrentIB0.4APC500CollectorpowerdissipationPC(Note1)1000mWJunctiontemperatureTj150°CStoragetemperaturerangeTstg−55to150°CNote1:Mountedonaceramicsubstrate(250mm2×0.8t)Note2:Usingcontinuouslyunderheavyloads(e.g.theapplicationofhightemperature/current/voltageandthesignificantchangeintemperature,etc.)maycausethisproducttodecreaseinthereliabilitysignificantlyeveniftheoperatingconditions(i.e.operatingtemperature/current/voltage,etc.)arewithintheabsolutemaximumratings.PleasedesigntheappropriatereliabilityuponreviewingtheToshibaSemiconductorReliabilityHandbook(“HandlingPrecautions”/DeratingConceptandMethods)andindividualreliabilitydata(i.e.reliabilitytestreportandestimatedfailurerate,etc).Unit:mmJEDEC―JEITASC-62TOSHIBA2-5K1AWeight:0.05g(typ.)2SC28732006-11-102ElectricalCharacteristics(Ta=25°C)CharacteristicsSymbolTestConditionMinTyp.MaxUnitCollectorcut-offcurrentICBOVCB=50V,IE=0――0.1μAEmittercut-offcurrentIEBOVEB=5V,IC=0――0.1μACollector-emitterbreakdownvoltageV(BR)CEOIC=10mA,IB=050――VhFE(1)(Note3)VCE=2V,IC=0.5A70―240DCcurrentgainhFE(2)VCE=2V,IC=2.0A20―――Collector-emittersaturationvoltageVCE(sat)IC=1A,IB=0.05A――0.5VBase-emittersaturationvoltageVBE(sat)IC=1A,IB=0.05A――1.2VTransitionfrequencyfTVCE=2V,IC=0.5A―120―MHzCollectoroutputcapacitanceCobVCB=10V,IE=0,f=1MHz―30―pFTurn-ontimeton―0.1―Storagetimetstg―1.0―SwitchingtimeFalltimetf―0.1―μsNote3:hFE(1)classificationO:70to140,Y:120to240Marking30ΩIB1IB120μsIB1=−IB2=0.05A,DUTYCYCLE≤1%IB2IB2OUTPUTINPUTMPartNo.(orabbreviationcode)LotNo.Alineindicateslead(Pb)-freepackageorlead(Pb)-freefinish.Characteristicsindicator2SC28732006-11-103Collector-emittersaturationvoltageVCE(sat)(V)VBE(sat)–ICVCE(sat)–ICVCE–IChFE–ICCollectorcurrentIC(A)VCE–ICVCE–ICCollectorcurrentIC(A)Collector-emittervoltageVCE(V)CollectorcurrentIC(mA)Base-emittersaturationvoltageVBE(sat)(V)CollectorcurrentIC(A)Collector-emittervoltageVCE(V)CollectorcurrentIC(mA)Collector-emittervoltageVCE(V)CollectorcurrentIC(mA)DCcurrentgainhFE2.01.61.20.80.4000.40.81.21.630IB=5mA402010CommonemitterTa=25°C2.01.61.20.80.4000.40.81.21.610IB=5mA203050CommonemitterTa=−55°C4010100100303050CommonemitterVCE=2V103001000300Ta=100°C−553000500100025100.1100300.030.05CommonemitterIC/IB=200.0130010000.3Ta=100°C−5530000.5125101003000300.30.13001000151030.5Ta=−55°C25100CommonemitterIC/IB=20502.01.61.20.80.4000.40.81.21.6403020105IB=3mACommonemitterTa=100°C2SC28732006-11-104CollectorcurrentIC(mA)Collector-emittervoltageVCE(V)CollectorcurrentIC(A)SafeOperatingAreaIC–VBEBase-emittervoltageVBE(V)AmbienttemperatureTa(°C)CollectorpowerdissipationPC(W)2.01.61.20.80.4000.51.01.52.0CommonemitterVCE=2VTa=100°C−5525PC–Ta000.80.20.40.6204060801001201401601.21.0(1)(2)(1)Mountedonaceramicsubstrate(250mm2×0.8t)(2)Noheatsink0.130.3511010030103050100300500100030005000DCoperationTa=25°CICmax(pulse)*ICmax(continuous)10ms*VCEOmax100ms*1S*1ms**:SinglenorepetitivepulseTa=25°CCurvesmustbederatedlinearlywithincreaseintemperatureTestedwithoutasubstrate2SC28732006-11-105RESTRICTIONSONPRODUCTUSE20070701-EN•Theinformationcontainedhereinissubjecttochangewithoutnotice.•TOSHIBAiscontinuallyworkingtoimprovethequalityandreliabilityofitsproducts.Nevertheless,semiconductordevicesingeneralcanmalfunctionorfailduetotheirinherentelectricalsensitivityandvulnerabilitytophysicalstress.Itistheresponsibilityofthebuyer,whenutilizingTOSHIBAproducts,tocomplywiththestandardsofsafetyinmakingasafedesignfortheentiresystem,andtoavoidsituationsinwhichamalfunctionorfailureofsuchTOSHIBAproductscouldcauselossofhumanlife,bodilyinjuryordamagetoproperty.Indevelopingyourdesigns,pleaseensurethatTOSHIBAproductsareusedwithinspecifiedoperatingrangesassetforthinthemostrecentTOSHIBAproductsspecifications.Also,pleasekeepinmindtheprecautionsandconditionssetforthinthe“HandlingGuideforSemiconductorDevices,”or“TOSHIBASemiconductorReliabilityHandbook”etc.•TheTOSHIBAproductslistedinthisdocumentareintendedforusageingeneralelectronicsapplications(computer,personalequipment,officeequipment,measuringequipment,industrialrobotics,domesticappliances,etc.).TheseTOSHIBAproductsareneitherintendednorwarrantedforusageinequipmentthatrequiresextraordinarilyhighqualityand/orreliabilityoramalfunctionorfailureofwhichmaycauselossofhumanlifeorbodilyinjury(“UnintendedUsage”).UnintendedUsageincludeatomicenergycontrolinstruments,airplaneorspaceshipinstruments,transportationinstruments,trafficsignalinstruments,combustioncontrolinstruments,medicalinstruments,alltypesofsafetydevices,etc..UnintendedUsageofTOSHIBAproductslistedinhisdocumentshallbemadeatthecustomer’sownrisk.•Theproduc