CGH40010中文资料

Subjecttochangewithoutnotice.00W,RFPowerGaNHEMTCree’sCGH40010isanunmatched,galliumnitride(GaN)highelectronmobilitytransistor(HEMT).TheCGH40010,operatingfroma28voltrail,offersageneralpurpose,broadbandsolutiontoavarietyofRFandmicrowaveapplications.GaNHEMTsofferhighefficiency,highgainandwidebandwidthcapabilitiesmakingtheCGH40010idealforlinearandcompressedamplifiercircuits.Thetransistorisavailableinbothscrew-down,flangeandsolder-down,pillpackages.PRELIMINARYRev.4–April2007FEATURESUpto4GHzOperation16dBSmallSignalGainat2.0GHz14dBSmallSignalGainat4.0GHz13WtypicalP3dB65%EfficiencyatP3dB28VOperation••••••APPLICATIONS2-WayPrivateRadioBroadbandAmplifiersCellularInfrastructureTestInstrumentationClassA,AB,LinearamplifierssuitableforOFDM,W-CDMA,EDGE,CDMAwaveforms•••••PackageTypes:440166,&440196PN’s:CGH40010F&CGH40010P2CGH4000Rev.4PreliminaryCree,Inc.4600SiliconDriveDurham,NC27703USATel:+1.919.313.5300Fax:[phone]©2006-2007Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.CreeandtheCreelogoareregisteredtrademarksofCree,Inc.AbsoluteMaximumRatings(notsimultaneous)at25˚CCaseTemperatureParameterSymbolRatingUnitsDrain-SourceVoltageVDSS84VoltsGate-to-SourceVoltageVGS-10,+2VoltsStorageTemperatureTSTG-55,+150˚COperatingJunctionTemperatureTJ175˚CMaximumForwardGateCurrentIGMAX4.0mASolderingTemperatureTS245˚CThermalResistance,JunctiontoCase1RθJC5.0˚C/WNote:1MeasuredfortheCGH40010FatPDISS=14W.ElectricalCharacteristics(TC=25˚C)CharacteristicsSymbolMin.Typ.Max.UnitsConditionsDCCharacteristics4GateThresholdVoltageVGS(th)-3.0-2.5-1.8VDCVDS=10V,ID=3.6mAGateQuiescentVoltageVGS(Q)–-2.0–VDCVDS=28V,ID=200mASaturatedDrainCurrentIDS2.42.7–AVDS=6.0V,VGS=2.0VDrain-SourceBreakdownVoltageVBR84100–VDCVGS=-8V,ID=3.6mACaseOperatingTemperatureTC-10–+105˚CScrewTorqueT––60in-ozReference440166PackageRevision3RFCharacteristics(TC=25˚C,F0=3.7GHzunlessotherwisenoted)SmallSignalGainGSS13.514.5–dBVDD=28V,IDQ=200mAPowerOutputat3dBCompressionP3dB1012.5–WVDD=28V,IDQ=200mADrainEfficiency1,2η5565–%VDD=28V,IDQ=200mA,P3dBOutputMismatchStressVSWR–TBD–YNodamageatallphaseangles,VDD=28V,IDQ=200mA,POUT=12WCWDynamicCharacteristicsInputCapacitanceCGS–5.00–pFVDS=28V,Vgs=-8V,f=1MHzOutputCapacitanceCDS–1.32–pFVDS=28V,Vgs=-8V,f=1MHzFeedbackCapacitanceCGD–0.43–pFVDS=28V,Vgs=-8V,f=1MHzNotes:1DrainEfficiency=POUT/PDC2Whentunedforbestefficiency(seetheapplicationschartinthisdatasheet).3WhentunedforbestP1dB(seetheapplicationschartinthisdatasheet).4Measuredonwaferpriortopackaging.3CGH4000Rev.4PreliminaryCree,Inc.4600SiliconDriveDurham,NC27703USATel:+1.919.313.5300Fax:[phone]©2006-2007Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.CreeandtheCreelogoareregisteredtrademarksofCree,Inc.TypicalPerformanceSweptCWDataofCGH4000Fvs.OutputPowerwithSourceandLoadImpedancesOptimizedforDrainEfficiencyat2.0GHzVDD=28V,IDQ=200mA,Freq=2.0GHzSweptCWDataofCGH4000Fvs.OutputPowerwithSourceandLoadImpedancesOptimizedforDrainEfficiencyat3.6GHzVDD=28V,IDQ=200mA,Freq=3.6GHz12131415161718262830323436384042Pout(dBm)Gain(dB)01020304050607080K(DrainEfficiency)(%)101112131415162325272931333537394143Pout(dBm)Gain(dB)08162432404856647280K(DrainEfficiency)(%)4CGH4000Rev.4PreliminaryCree,Inc.4600SiliconDriveDurham,NC27703USATel:+1.919.313.5300Fax:[phone]©2006-2007Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.CreeandtheCreelogoareregisteredtrademarksofCree,Inc.TypicalPerformanceSweptCWDataofCGH4000Fvs.OutputPowerwithSourceandLoadImpedancesOptimizedforP1Powerat3.6GHzVDD=28V,IDQ=200mA,Freq=3.6GHzSimulatedMaximumStableGain,MaximumAvailableGainandKFactoroftheCGH4000FVDD=28V,IDQ=200mA8910111213142325272931333537394143Pout(dBm)Gain(dB)06121824303642485460K(DrainEfficiency)(%)0.51.52.53.54.5Frequency(GHz)101520253000.3750.751.131.5MSG,MAG(dB)KFactor5CGH4000Rev.4PreliminaryCree,Inc.4600SiliconDriveDurham,NC27703USATel:+1.919.313.5300Fax:[phone]©2006-2007Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.CreeandtheCreelogoareregisteredtrademarksofCree,Inc.SourceandLoadImpedancesFrequency(MHz)ZSourceZLoad50013.1+j1715.6+j13.410009.2+j10.712.96+j8.2515006.4+j3.98.78+j3.925004.0–j4.06.37–j0.135003.8–j10.45.45–j5.1Note1.VDD=28V,IDQ=200mAinthe440166package.Note2.OptimizedforP1dBCGH4000PowerDissipationDe-ratingCurveDZSourceZLoadGS051015202530350255075100125150175200MaximumCaseTemperature(°C)PowerDissipation(W)6CGH4000Rev.4PreliminaryCree,Inc.4600SiliconDriveDurham,NC27703USATel:+1.919.313.5300Fax:[phone]©2006-2007Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.CreeandtheCreelogoareregisteredtrademarksofCree,Inc.CGH4000-TBDemonstrationAmplifierCircuitSchematicCGH4000-TBDemonstrationAmplifierCircuitOutlineCGH40010-TB3-000