spectre-仿真输出参数

OutputParameters1weff(m)Effectivechannelwidth.2leff(m)Effectivechannellength.3rseff(∧)Effectivesourceresistance.4rdeff(∧)Effectivedrainresistance.5lv3(m2)Effectivedrainarea.6lv4(m2)Effectivesourcearea.7lv11(m)Effectivedrainperimeter.8lv12(m)Effectivesourceperimeter.9lv50(V)Surfacepotential(phi).10lv51(m)Oxidethickness(tox).11lv16(S)Effectivesourceparasiticconductance.12lv17(S)Effectivedrainparasiticconductance.13aseff(m2)Effectivesourcearea.14adeff(m2)Effectivedrainarea.15pseff(m)Effectivesourceperimeter.16pdeff(m)Effectivedrainperimeter.Operating-PointParameters1type=nTransistortype.Possiblevaluesarenorp.2region=triodeEstimatedoperatingregion.Spectreoutputsnumber(0-4)inarawfile.Possiblevaluesareoff,triode,sat,subth,orbreakdown.3reversedReversemodeindicator.Possiblevaluesarenooryes.4ids(A)Resistivedrain-to-sourcecurrent.5lx4(A)Aliasforids,oppositesignwhenreversed.6lx50(A)Bulktosourcesubstratecurrent.7vgs(V)Gate-sourcevoltage.8vds(V)Drain-sourcevoltage.9vbs(V)Bulk-sourcevoltage.10vth(V)Thresholdvoltage.11lv9(V)Aliasforvth.12vdsat(V)Drain-sourcesaturationvoltage.13lv26(V)Flat-bandvoltage(vfbeff).14lv10(V)Aliasforvdsat.15gm(S)Common-sourcetransconductance.16gds(S)Common-sourceoutputconductance.17gmbs(S)Body-transconductance.18betaeff(A/V2)Effectivebeta.19cjd(F)Drain-bulkjunctioncapacitance.20cjs(F)Source-bulkjunctioncapacitance.21lx12(Coul)Qbintrinsic,oppositesignforpmos.22lx14(Coul)Qgintrinsic,oppositesignforpmos.23lx16(Coul)Qdintrinsic,oppositesignforpmos.24lx24(Coul)Drainjunctiondiodecharge.25lx26(Coul)Sourcejunctiondiodecharge.26cgg(F)dQg_dVg.27cgd(F)dQg_dVd.28cgs(F)dQg_dVs.29cgb(F)dQg_dVbk.30cdg(F)dQd_dVg.31cdd(F)dQd_dVd(IntrinsicpartofCdd).32cds(F)dQd_dVs.33cdb(F)dQd_dVb.34csg(F)dQs_dVg.35csd(F)dQs_dVd.36css(F)dQs_dVs.37csb(F)dQs_dVb.38cbg(F)dQb_dVg.39cbd(F)dQb_dVd(IntrinsicpartofCbd).40cbs(F)dQb_dVs(IntrinsicpartofCbs).41cbb(F)dQb_dVb.42ron(∧)On-resistance.43id(A)Resistivedraincurrent.44is(A)Resistivesourcecurrent.45ibulk(A)Resistivebulkcurrent.46lx5(A)Sourcejunctiondiodecurrent.47lx6(A)Drainjunctiondiodecurrent.48pwr(W)Poweratoppoint.49gmoverid(1/V)Gm/Ids.50lv36(F)Gate-Sourceoverlapcapacitance.51lv37(F)Gate-drainoverlapcapacitance.52lv38(F)Gate-bulkoverlapcapacitance.53lx18(F)AliasofdQg_dVg.54lx19(F)AliasofdQg_dVd.55lx20(F)AliasofdQg_dVs.56lx21(F)AliasofdQb_dVg.57lx22(F)AliasofdQb_dVd.58lx23(F)AliasofdQb_dVs.59lx28(F)AliasofSource-bulkjunctioncapacitance.60lx29(F)AliasofDrain-bulkjunctioncapacitance.61lx32(F)AliasofdQd_dVg.62lx33(F)AliasofdQd_dVd.63lx34(F)AliasofdQd_dVs.64lx7(S)AliasofCommon-sourcetransconductance.65lx8(S)AliasofCommon-sourceoutputconductance.66lx9(S)AliasofBody-transconductance.67i1(A)Aliasforid.68i3(A)AliasofResistivesourcecurrent.69i4(A)AliasofResistivebulkcurrent.70lx10(S)Conductanceofthedraindiode.71lx11(S)Conductanceofthesourcediode.72lx1(V)AliasofBulk-sourcevoltage.73lx2(V)AliasofGate-sourcevoltage.74lx3(V)AliasofDrain-sourcevoltage.