微型真空电子器件和太赫兹辐射源技术进展

(,100016):.(FEA).FEA,FEA.5A/cm2,.,.1W.:;;:TN12:A:037222112(2003)0921361204Micro2VacuumElectronDevicesandTerahertzVacuumSourcesLIAOFu2jiang(BeijingVacuumElectronicsResearchInstitute,Beijing100016,China)Abstract:Recentdevelopmentsinmicrofabricationhaveproducednewopportunitiesinvacuumelectronics.Thevarietyofmi2crofabricationapplicationsinvacuumelectronicsissteadilygrowing.Theimpressiveachievementsarefieldemitterarrays(FEAs)forcoldcathodes.AnewclassofmicrofabricatedvacuumelectrondevicesorVEDwillmakethemicrowave/millimeterwavetubesminiatureandlowcosts.Theywillalsoworkinterahertzfrequencywithpoweroutputupto1W.Keywords:microfabrication;vacuummicroelectronics;terahertztechnique1.[1].:(1)(FEA);(2)//;(3);(4),...(FEA)650A/cm2,8,2000A/cm2[2].FEA[35],27W55W,.,4A/cm2[6].(VED).,1000m-100m,300GHz-3THz[7],,,[7];,,,;.300GHz,10%10Gbits/s[9].,,,.(VED),,,.80,(NASA),,400GHz1.8THz[10,11].,.,,[1,8,12,13].,.2(FEA)20[14].,,,,:2003205219;:2003206230920039ACTAELECTRONICASINICAVol.31No.9Sep.20031(a)Spindt;(b)Spindt;(c)2.,,[15].1990,Spindt.1Spindt[16].,1m(SiO2),(SiO2)0.25m,1m,SiO2,,.[14],1.,,,.2,,.,Spindt.,1012A/cm2,.,.EF.,,.2-5eV.E0,(-eE0x),x.,,.,:eff-318F1/2=318F1/2,(Schot2tky).EF:x=/(eE0)E0107V/cm,,,;E02-3107V/cm,,.FowlerNordheim:IA2V2exp(-B3/2/V)I,A,V,V,A=(1.510-6a/)exp(1014/1/2),a(cm2),B,=E0/V.ln(I/V2)1/VFowler2Nordheim.,.1.1[17]FEAMoMoMoSiSiSRIMITMITMCNCMCNC10000600070300330028074/cm21.310610910931063106180mA15mA22mA6mA2115mADCDCDC23240031062.1A/cm2A/cm2A/cm2A/cm2A/cm225nm10nm10nm5nm5nm,,.().,.,,.(undercut),2.5106/cm2(6m).(RIE),1.6107/cm2.108/cm2[18].1(c)8.6A.4106/cm2,34A/cm2,3.75A/cm2[19].,....[18],26312003,.,2525200,35.38A/cm2[19].3.,.4Fowler2Nordheim,,,,4Fowler2Nordheim..NECFEAX27W.2000C59W.56,,.,Pierce,.5..Spindt[20].WhaleyPierce,[4].Pierce,,.,Pierce.,.FEA.150mA19A/cm2.5000V.6.150mA19.1A/cm2,.,.2.RF,,.2RFTWTTWT8.9cm12.5cm(Ik100mA)192W158W01400.330.613dB9dB25dB33dB1dB4dB12dB22dB24dB-17dB-12dB30dBm30dBm3(VED)(VED).,,,7LIGA94GHz,.7LIG2A(LIGAX)94GHz[1].THz(013-310THz)01001-110WVED.013,016112THz.,.,36319:[12].1WTHz.8560GHz,56mW.,.616mm,1019kV015mA,520-580GHz10dB[9].856mW,560GHz4,,(FEA),,.,FEA,.FEA,,.,MEMSLIGA,..,.,.THz,.:[1]JHBooske.Newopportunitiesinvacuumelectronicsthroughtheappli2cationofmicrofabricationtechnologies[A].ProcIVEC2002[C].Cal2ifornia,USA:IVEC,2002.11-12.[2]CSpindt.FEAfabrication[A].IEEEInnovativeVacuumElectronicsMini2course,PPPS22001Conference[C].LasVegas:IEEEIVEM,2001.[3]DRWhaleyetal.Experimentaldemonstrationofanemissiontravelingwavetubeamplifier[J].IEEETransPlasmaScience,2002,30(3):998-1008.[4]DRWhaleyetal.Applicationoffieldarraytomicrowavepowerampli2fiers[J].IEEETransPlasmaScience,2000,28(3):727-746.[5]HImuraetal.Electrongundesignfortravelingwavetubes(TWTs)usingafieldemitterarray(FEA)cathode[A].IEEEIEDM[C].USA:IEEEIEDM,1997.[6]MEReadetal.Carbon2NanotubeCathodeforMicrowaveTubes[A].IEEEProcIVEC,Davis[C].USA:IEEIVEC,2001.[7]PHSiegel.Terahertztechnology[J].IEEETransonMTT,2002,50(3):910-928.[8]KKincade.Terahertzraysfindnewwaysbeefupsecurity[J].LaserFocusWorld,2003,39(4).[9]SBhatacharjee,etal.ComprehensivesimulationsofcompactTHzradia2tionsourcesusingmicrofabricated,foldedwaveguideTWTs[A].IVEC[C].USA:Monterey,2002.26-27.[10]HFGrayetal.Avacuumfieldeffecttransistorusingsiliconfieldemit2terarrays[A].IEDM[C].WashingtonDC,USA:1986.776-779.[11]JADayton,JrHG.Kosmahl.Ultrasmallelectronbeamamplifiers[A].IEDM[C].WashingtonDC,USA:1986.780-783.[12]HMManoharaetal.Fabricationandemittermeasurementsforananoklystron:anovelTHzmicro2tubesource[A].ProcIVEC,Mon2terey[C].USA:2002:28-29.[13]AGRozhnev,etal.Novelconceptsofvacuummicroelectronicmi2crowavedeviceswithfieldemittercathodearrays[A].ProcIVECMonterey[C].USA:IVEC,2002.69-70.[14]CASpindt.Athin2filmfield2emissioncathode[J].JApplPhys,1968,39(7):3504-3505.[15]CASpindt.Field2emitterarraysforvacuummicroelectronics[J].IEEEETransonED,Oct1991,38(10):2355-2363.[16]XingHuiLietal.InvestigationofFEAsappliedinvacuumelectrongun[A].ProceedingsIVESC2002[C].Saratov,Russia:IVESC,2002.145-147.[17]JANation,etal.Advancesincoldcathodephysicsandtechnology[J].PIEEE,1999,87(5):865-889.[18]PRSchwoebel,etal.High2currentprocessingofmicrofabricatedfieldemittersforenhancedemissionuniformityandhigh2current2density2op2eration[A].IEEEIVEC[C].Monterey,USA:IVEC,2002.65-66.[19]XinHuiLi,etal.Studyoffieldemissionarraysfortravelingwavetubes[A].IEEEIVEC[C].Seoul,Korea:IEEE,2003.[20]CASpindt,etal.Fieldemissioncathodearraydevelopmentforhighcurrentdensityapplications[J].ApplicationsofSuefaceScience,1983,16:268-276.:,193712,1960,,19601980,,19801982,19891990;19951996;,,,,,,,,IEEEEDS,IEEEEDS.46312003