STP75NF75

February2007Rev81/1616OrdercodesPartnumberMarkingPackagePackagingSTB75NF75T4B75NF75D²PAKTape&reelSTP75NF75P75NF75TO-220TubeSTP75NF75FPP75NF75TO-220FPTubeSTB75NF75STP75NF75-STP75NF75FPN-channel75V-0.0095Ω-80A-TO-220-TO-220FP-D2PAKSTripFET™IIPowerMOSFETGeneralfeatures■Exceptionaldv/dtcapability■100%avalanchetestedDescriptionThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET™processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiency,high-frequencyisolatedDC-DCconvertersforTelecomandComputerapplications.Itisalsointendedforanyapplicationswithlowgatedriverequirements.Applications■SwitchingapplicationInternalschematicdiagramTypeVDSSRDS(on)IDSTB75NF7575V0.011Ω80A(1)STP75NF7575V0.011Ω80A(1)STP75NF75FP75V0.011Ω80A(1)1.Currentlimitedbypackage123TO-220TO-220FPD²PAK13123(curves)............................63Testcircuit................................................94Packagemechanicaldata....................................105Packagingmechanicaldata..................................146Revisionhistory...........................................15STB75NF75-STP75NF75-STP75NF75FPElectricalratings3/161ElectricalratingsTable1.AbsolutemaximumratingsSymbolParameterValueUnitD2PAK/TO-220TO-220FPVDSDrain-sourcevoltage(VGS=0)75VVDGRDrain-gatevoltage(RGS=20KΩ)75VVGSGate-sourcevoltage±20VID(1)1.CurrentlimitedbypackageDraincurrent(continuous)atTC=25°C8080AID(1)Draincurrent(continuous)atTC=100°C7070AIDM(2)2.PulsewidthlimitedbysafeoperatingareaDraincurrent(pulsed)320320APTOTTotaldissipationatTC=25°C30045WDeratingfactor2.00.3W/°Cdv/dt(3)3.ISD≤80A,di/dt≤300A/µs,VDD≤V(BR)DSS,Tj≤TJMAXPeakdioderecoveryvoltageslope12V/nsEAS(4)4.StartingTJ=25oC,ID=40A,VDD=37.5VSinglepulseavalancheenergy700mJVISOInsulationwithstandvoltage(RMS)fromallthreeleadstoexternalheatsink(t=1s;TC=25°C)--2000VTJTstgOperatingjunctiontemperatureStoragetemperature-55to175°CTable2.ThermaldataSymbolParameterValueUnitD2PAK/TO-220TO-220FPRthJCThermalresistancejunction-casemax0.53.33°C/WRthJAThermalresistancejunction-ambientmax62.5°C/WTlMaximumleadtemperatureforsolderingpurpose(1)1.1.6mmfromcasefor10sec)300°CElectricalcharacteristicsSTB75NF75-STP75NF75-STP75NF75FP4/162Electricalcharacteristics(TCASE=25°Cunlessotherwisespecified)Table3.On/offstatesSymbolParameterTestconditionsMin.Typ.Max.UnitV(BR)DSSDrain-sourcebreakdownvoltageID=250µA,VGS=075VIDSSZerogatevoltagedraincurrent(VGS=0)VDS=Maxrating,VDS=Maxrating@125°C110µAµAIGSSGatebodyleakagecurrent(VDS=0)VGS=±20V±100nAVGS(th)GatethresholdvoltageVDS=VGS,ID=250µA234VRDS(on)Staticdrain-sourceonresistanceVGS=10V,ID=40A0.00950.011ΩTable4.DynamicSymbolParameterTestconditionsMin.Typ.Max.Unitgfs(1)1.Pulsed:pulseduration=300µs,dutycycle1.5%ForwardtransconductanceVDS=15V,ID=40A20SCissCossCrssInputcapacitanceOutputcapacitanceReversetransfercapacitanceVDS=25V,f=1MHz,VGS=03700730240pFpFpFQgQgsQgdTotalgatechargeGate-sourcechargeGate-drainchargeVDD=60V,ID=80AVGS=10V1172747160nCnCnCSTB75NF75-STP75NF75-STP75NF75FPElectricalcharacteristics5/16Table5.SwitchingtimesSymbolParameterTestconditionsMin.Typ.Max.Unittd(on)trtd(off)tfTurn-ondelaytimeRisetimeTurn-offdelaytimeFalltimeVDD=37.5V,ID=45A,RG=4.7Ω,VGS=10VFigure15onpage9251006630nsnsnsnsTable6.SourcedraindiodeSymbolParameterTestconditionsMinTyp.MaxUnitISDSource-draincurrent80AISDM(1)1.PulsewidthlimitedbysafeoperatingareaSource-draincurrent(pulsed)320AVSD(2)2.Pulsed:pulseduration=300µs,dutycycle1.5%ForwardonvoltageISD=80A,VGS=01.5VtrrQrrIRRMReverserecoverytimeReverserecoverychargeReverserecoverycurrentISD=80A,di/dt=100A/µs,VDD=25V,TJ=150°CFigure17onpage913266010nsnCAElectricalcharacteristicsSTB75NF75-STP75NF75-STP75NF75FP6/162.1Electricalcharacteristics(curves)Figure1.SafeoperatingareaforTO-220-D²PAKFigure2.ThermalimpedanceforTO-220-D²PAKFigure3.SafeoperatingareaforTO-220FPFigure4.ThermalimpedanceforTO-220FPFigure5.OutputcharacterisicsFigure6.TransfercharacteristicsSTB75NF75-STP75NF75-STP75NF75FPElectricalcharacteristics7/16Figure7.TransconductanceFigure8.Staticdrain-sourceonresistanceFigure9.Gatechargevsgate-sourcevoltageFigure10.CapacitancevariationsFigure11.NormalizedgatethresholdvoltagevstemperatureFigure12.NormalizedonresistancevstemperatureElectricalcharacteristicsSTB75NF75-STP75NF75-STP75NF75FP8/16Figure13.Source-draindiodeforwardcharacteristicsFigure14.NormalizedBVDSSvstemperatureSTB75NF75-STP75NF75-STP75NF75FPTestcircuit9/163TestcircuitFigure15.SwitchingtimestestcircuitforresistiveloadFigure16.GatechargetestcircuitFigure17.TestcircuitforinductiveloadswitchinganddioderecoverytimesFigure18.UnclampedinductiveloadtestcircuitFigure19.UnclampedinductivewaveformPackagemechanicaldataSTB75NF75-STP75NF75-STP75NF75FP10/164PackagemechanicaldataInordertomeetenvironmentalrequirements,SToffersthesedevicesi